The report investigates the influence of radiation defects, formed in near-surface regions of CdTe after As ion implantation, on the high temperature doping and ISOVPE growth of Cd_XHg_1-XTe epitaxial layers.For experiments, the undoped CdTe single crystals of (111) orientation and epitaxial layers on their basis with the surface source of dopant produced by As ion implantation were used. The structure of both CdTe ion implanted surfaces after high temperature annealing and Cd_XHg_1-XTe epitaxial layers grown on those substrates has been studied.The X-ray spectrometry single and double-crystal techniques in symmetric, asymmetric and skew-asymmetric geometry of sample placement have been used. Structural changes in both rocking curves and X-ray topograms obtained at different angles of azimuth scanning have been revealed. On the basis of a semi-kinematic and dynamical theory of X-ray diffraction the computer simulations of strain and distortion distributions in material after applied technological processes were performed. For a given distribution of deformations the rocking curve were calculated and compared with the experimental one.

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