Several sets of self-assembled silicon nanowires grown using two different catalytically enhanced methods are characterized using electron spin resonance, scanning electron microscopy, and x-ray diffraction. Some of the samples were highly doped by paramagnetic atoms (P³¹) during growth. Undoped samples of unattached to substract nanowires show the resonance signal of dangling bonds with g=2.0055 and line width DH=7.2 G. In the doped samples a single line of P³¹ strongly narrowed was observed. The anisotropy of the P³¹ g-factor was found, indicating compressive stress T in the nanowires. The dependence of the g-factor on stress was analyzed, and the value of T along the [100] direction was estimated to be T₁₀₀ » 0.2-0.1 GPa. All spectral lines from nanowires except the signal of dangling bonds are characterized by a small value of the line width 1. Oe≤ DH ≤ 2.6 Oe, which suggest long spin life time.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/7423 must be provided.

1. INVESTIGATION OF Si WIRE TRANSMISSION
2. Relationship between condition of deposition and properties of W-Ti-N thin films prepared by reactive magnetron sputtering
3. A study of the magnetic resonance in a monocrystalline Ni50.47 Mn28.17Ga21.35
4. Structural analysis of reactively sputtered W-Ti-N thin films