Diffusion and diffusion induced defects in GaN
|Dmytro Kolesnikov 1, Witold Łojkowski 1, Christian Jäger 3, Wolfgang Jäger 3, Michal Bockowski 1, Rafał Jakieła 2|
1. Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
GaN and it solid solution with InN and AlN have become very popular for the last 10 years. It is connected with the possibility of using it in the optoelectronics. Diffusion processes in GaN play a very important role. Annealing at high temperatures is useful for many technological processes such as removing of defects after implantation, doping or electrical contact activation. The process of laser degradation is connected with diffusion of impurities. This process depends strongly on structural quality of the epitaxial layers.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Dmytro Kolesnikov
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-05 12:28 Revised: 2009-06-08 12:55
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