dr Michal Bockowski

e-mail:
phone: +48-22-6325010
fax: +48-22-6324218
web:
interest(s):

Affiliation:


Polish Academy of Sciences, Institute of High Pressure Physics

address: Sokolowska 29/37, Warszawa, 01-142, Poland
phone: +48-22-6324302
fax: +48-22-6324218
web: http://www.unipress.waw.pl

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration

Publications:


  1. Diffusion and diffusion induced defects in GaN
  2. Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
  3. Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
  4. Magnetotransport studies of Ga(Mn,Fe)N bulk crystals
  5. Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds
  6. Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration



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