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Julian Auleytner

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Affiliation:

Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Participant:

E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:
E-MRS Fall Meeting 2003
Nanostructure of laser annealed Ge-implanted near-surface Si layers

Publications:
  1. Defect structure of Sn-implanted Si crystal annealed by nanosecond laser pulse
  2. Modification of the nanostructure of the amorphised Si near-surface layer
  3. Nanostructure of laser annealed Ge-implanted near-surface Si layers
  4. Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
  5. X-ray diffractometric study of micro-precipitates created by fast nitrogen ions in GaAs single crystal
  6. X-ray study of quartz single crystals implanted with fast Ar ions



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