We present recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE (PAMBE) for electronic components like laser diodes (LDs), high electron mobility transistors (HEMTs) and resonant tunneling diodes (RTDs). This technology is ammonia free and nitrogen for growth is activated by RF plasma source from nitrogen molecules. We describe new approach for growth of nitrides by PAMBE at low temperatures. The crucial for this technique is to use thin, dynamically stable, metal (In or Ga) layer on (0001) GaN surface, which significantly reduces barriers for N adatom diffusion enabling high quality 2D step-flow growth mode at low temperatures. We demonstrate importance of low threading dislocation (TDs) density substrates for high quality epitaxy in PAMBE. The gowth of nitrides on low TDs density bulk GaN substrates allows to achieve step-flow epitaxy with parallel atomic steps and eliminates problems related with formation of hillocks due to the dislocation mediated growth - e.g., a high mobility twodimensional electron gas at GaN/AlGaN interface (exceeding 110 000 cm²/Vs at 4.2 K) is achieved.

The new perspective for PAMBE in optoelectronics has been opened recently by a demonstration of blue–violet LDs [1]. We show room temperature, continuous wave (cw) operation of InGaN multiquantum wells LDs made by PAMBE at 411 nm wavelength . The threshold current density and voltage were 4.2 kA/cm² and 5.3 V respectively. High cw optical power output of 60 mW is achieved. The LDs were fabricated on low TDs density bulk GaN substrates at growth temperatures 600^oC - 700^oC.

In this work, we discuss also properties of InGaN/GaN quantum wells, p-type conductivity limits in GaN:Mg and InGaN:Mg layers and point out potential of PAMBE for UV and green emitters.

Acknowledgements: This work was partially supported by Polish Ministry of Science and Higher Education Grant Nr 3T11B04729

[1] C. Skierbiszewski, et. al., Appl. Phys. Lett. 88, 221108 (2006)

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1. Semipolar and nonpolar AlGaN growth mechanisms under N-rich conditions in PAMBE
2. Indium incorporation mechanism during InGaN growth by plasma-assisted molecular beam epitaxy
3. Semipolar (2021) UV LEDs and LDs grown by PAMBE
4. Far field pattern of AlGaN cladding free blue laser diodes grown by PAMBE
5. TEM investigation of processed  InGaN based laser grown by PAMBE on bulk GaN substrate
6. Low temperature plasma assisted MBE growth for nitride optoelectronic devices
7. Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells
8. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy