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Czeslaw Skierbiszewski
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Affiliation:
Polish Academy of Sciences, Institute of High Pressure Physics
address:
Sokolowska 29/37, Warszawa, 01-142,
Poland
phone:
+48-22-6324302
fax:
+48-22-6324218
web:
http://www.unipress.waw.pl
Participant:
E-MRS Fall Meeting 2003
began:
2003-09-15
ended:
2003-09-11
Presented:
E-MRS Fall Meeting 2003
The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy
Participant:
Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
began:
2007-05-20
ended:
2007-05-24
Presented:
Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
Low temperature plasma assisted MBE growth for nitride optoelectronic devices
Participant:
E-MRS Fall Meeting 2007
began:
2007-09-17
ended:
2007-11-30
Presented:
E-MRS Fall Meeting 2007
Blue laser diodes by low temperature plasma assisted MBE
Participant:
Euro MBE 2009
began:
2009-03-08
ended:
2009-03-11
Presented:
Publications:
Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells
Blue laser diodes by low temperature plasma assisted MBE
Far field pattern of AlGaN cladding free blue laser diodes grown by PAMBE
Indium incorporation mechanism during InGaN growth by plasma-assisted molecular beam epitaxy
Low temperature plasma assisted MBE growth for nitride optoelectronic devices
Semipolar (2021) UV LEDs and LDs grown by PAMBE
Semipolar and nonpolar AlGaN growth mechanisms under N-rich conditions in PAMBE
TEM investigation of processed InGaN based laser grown by PAMBE on bulk GaN substrate
The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy
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