We present the results of studying of current – voltage (I-V) characteristics of the structure based on II-VI materials including wide band gap zinc sulfide (Eg = 3.58 eV). The examined structures are prepared by continuous thermal evaporation of CdSe and ZnS powders with films growth in quasi-closed space. The presented structure works as ultraviolet detectors.

Taking into account the facts that the upper conductive layer Cu_xS is degenerative semiconductor material, CdSe thick layer serves as a base layer for formation of ohmic contact to Mo, we consider that the main process for the charge carrier transport take place in thin film of ZnS and in the junction of ZnS - Cu_xS and examine our structure as a Schottky diode. The I-V characteristics are measured from 183 to 343 K using the measurement setup described in [1]. The procedure of extraction of diode parameters is fulfilled on the base of the method presented in [1] applying the Lambert function. The simulated and experimental I-V curves show the good fitting and it allows extracting the diode parameters and examines their temperature dependences. The temperature curves show the follows results: the series resistance linear drops with temperature increase; monotonic and quasi-linear dependence of the Schottky barrier height that increase from 0.3 to 0.8 eV with temperature increasing; the ideality factor has the linear temperature dependence in temperature range (180 – 280 K) with dependence n ~ -0.094*T. The big value of the ideality factor points to the non - ideal of the junction and big influence of multistep tunnel - recombination currents through the levels in the space-charge region.

The mathematical simulation shows that contribution from shunt resistance is negligible.

1. W. Jung, M. Guziewicz, Mater. Sci. Eng. B (2009), doi:10.1016/j.mseb.2009.02.013

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