No.
|
Presenting person
|
Title
|
| We1 |
Igor C. Avetissov |
Impurity Influence On Polytype Generation At SiC Vapor Growth |
| We2 |
Jose H. Dias da Silva |
Substrate orientation, temperature and energetic atomic collisions effects on the structure of GaN films grown by reactive sputtering |
| We3 |
Jürgen Erlekampf |
Evaluation of different baffle geometries in an ammonothermal system by a local numerical 3D model |
| We4 |
Katarzyna Gas |
Physical properties of unique ZnO single crystals from Oława Foundry |
| We5 |
Sylwia Gierałtowska |
Growth of zinc oxide and dielectric films using Atomic Layer Deposition method from organic precursors |
| We6 |
Daniela Gogova |
A study on n-type doping of β-Ga2O3 layers grown by MOCVD |
| We7 |
Takahide Hirasaki |
Growth of thick InGaN by Hydride Vapor Phase Epitaxy |
| We8 |
Soon-Ku Hong |
Crystal orientation variation of nonpolar AlN films grown with III/V ratio on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy |
| We9 |
Hyojin Kim |
Zinc oxide wire-like thin films as nitrogen monoxide gas sensor |
| We10 |
Kamil Klosek |
MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications |
| We11 |
Nazar O. Kovalenko |
Optical and mechanical properties of a hexagonal single crystals of Zn1-xMnxS:Fe2+ solid solution |
| We12 |
Baskar Krishnan |
Studies on dislocation and surface morphology of AlxGa1-xN/GaN heterostructures grown by MOCVD |
| We13 |
Baskar Krishnan |
Growth and characterization of AlxGa1-xN/GaN/ Al2O3 heterostuctures |
| We14 |
Ching-Shun Ku |
Strain relaxation behavior of ultra-thin ZnO films on m-plane sapphire growth by atomic layer deposition |
| We15 |
Vladimir I. Kushnirenko |
Structural and luminescent properties of ZnO thin films doped with Cu, Ga, Ag |
| We16 |
Chih-Ming Lin |
Synthesis and physical properties for Al-doped ZnO nanostructure powders with the chemical precipitation method |
| We17 |
Kung Liang Lin |
Evaluations of GaN film grown on patterned Si (111) templates substrates |
| We18 |
Hisashi Murakami |
Influence of surface orientation on the In-incorporation of HVPE-grown InGaN studied by theoretical calculations |
| We19 |
Grzegorz Muziol |
Far field pattern of AlGaN cladding free blue laser diodes grown by PAMBE |
| We20 |
Dmitrii Nechaev |
Growth of atomically-smooth droplet-free AlxGa1-xN (x>0.5) layers by plasma assisted molecular beam epitaxy under strong metal-rich conditions |
| We21 |
Tadashi Ohachi |
Activity modulation and role of nitrogen radicals in PA-MBE for growth of group III nitrides and their alloys |
| We22 |
Tetsuo Ozawa |
AlN single crystal growth on sapphire substrate under atomic nitrogen plasma |
| We23 |
Jacek Piechota |
A density functional theory study of the Zn, O, O2, and H2O adsorption on the polar ZnO(0001) and ZnO(000-1) surfaces |
| We24 |
Ewa Przezdziecka |
Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE |
| We25 |
Ewa Przezdziecka |
Grown ZnMgO/ZnO/ZnMgO heterostructures on p-type Si(111) by MBE method |
| We26 |
Ewa Przezdziecka |
Dual-acceptor doped p-ZnO:(As+Sb)/n-GaN heterojunctions grown by PA-MBE as a highly selective UV detector |
| We27 |
Katarzyna Racka |
Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2 |
| We28 |
Konrad Sakowski |
Drift-diffusion simulations of gallium nitride based heterostructures |
| We29 |
Dietmar Siche |
Vapour phase growth of single crystalline GaN layers in hot microwave plasma |
| We30 |
Paweł Skupiński |
The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth |
| We31 |
Pawel Strak |
Absorption and emission spectra of AlN/GaN superlattice structures by DFT methods |
| We32 |
Emil Tymicki |
The influence of the PVT growth conditions on the SiC crystal shape |
| We33 |
Marya E. Voronchikhina |
The influence of atmosphere on β-Ga2O3 single crystal growth by floating zone |
| We34 |
Tomasz Wejrzanowski |
Modeling of growth kinetics of SiC single crystal in PVT process |
| We35 |
Ya-Fen Wu |
Investigations on recombination mechanisms in InGaN/AlGaN multiple quantum wells |
| We36 |
JunShuai Xue |
Investigation of TMIn pulse duration effect on the properties of InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition |
| We37 |
Tomohiro Yamaguchi |
RF-MBE growth of GaN films on nitridated α-Ga2O3 buffer layer |
| We38 |
Jigang Yin |
Direct Comparison of ZnO single crystal grown by the hydrothermal and Pressurized melt growth method |
