17th International Conference on Crystal Growth and Epitaxy...

 on-line journal

Presenting person
We1 Igor C. Avetissov Impurity Influence On Polytype Generation At SiC Vapor Growth
We2 Jose H. Dias da Silva Substrate orientation, temperature and energetic atomic collisions effects on the structure of GaN films grown by reactive sputtering
We3 Jürgen Erlekampf Evaluation of different baffle geometries in an ammonothermal system by a local numerical 3D model
We4 Katarzyna Gas Physical properties of unique ZnO single crystals from Oława Foundry
We5 Sylwia Gierałtowska Growth of zinc oxide and dielectric films using Atomic Layer Deposition method from organic precursors
We6 Daniela Gogova A study on n-type doping of β-Ga2O3 layers grown by MOCVD
We7 Takahide Hirasaki Growth of thick InGaN by Hydride Vapor Phase Epitaxy
We8 Soon-Ku Hong Crystal orientation variation of nonpolar AlN films grown with III/V ratio on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy
We9 Hyojin Kim Zinc oxide wire-like thin films as nitrogen monoxide gas sensor
We10 Kamil Klosek MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications 
We11 Nazar O. Kovalenko Optical and mechanical properties of a hexagonal single crystals of Zn1-xMnxS:Fe2+ solid solution
We12 Baskar Krishnan Studies on dislocation and surface morphology of AlxGa1-xN/GaN heterostructures grown by MOCVD
We13 Baskar Krishnan Growth and characterization of AlxGa1-xN/GaN/ Al2O3 heterostuctures  
We14 Ching-Shun Ku Strain relaxation behavior of ultra-thin ZnO films on m-plane sapphire growth by atomic layer deposition
We15 Vladimir I. Kushnirenko Structural and luminescent properties of ZnO thin films doped with Cu, Ga, Ag
We16 Chih-Ming Lin Synthesis and physical properties for Al-doped ZnO nanostructure powders with the chemical precipitation method
We17 Kung Liang Lin Evaluations of GaN film grown on patterned Si (111) templates substrates
We18 Hisashi Murakami Influence of surface orientation on the In-incorporation of HVPE-grown InGaN studied by theoretical calculations
We19 Grzegorz Muziol Far field pattern of AlGaN cladding free blue laser diodes grown by PAMBE
We20 Dmitrii Nechaev Growth of atomically-smooth droplet-free AlxGa1-xN (x>0.5) layers by plasma assisted molecular beam epitaxy under strong metal-rich conditions
We21 Tadashi Ohachi Activity modulation and role of nitrogen radicals in PA-MBE for growth of group III nitrides and their alloys
We22 Tetsuo Ozawa AlN single crystal growth on sapphire substrate under atomic nitrogen plasma
We23 Jacek Piechota A density functional  theory study of the Zn, O, O2, and H2O adsorption on the polar ZnO(0001) and ZnO(000-1) surfaces
We24 Ewa Przezdziecka Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
We25 Ewa Przezdziecka Grown ZnMgO/ZnO/ZnMgO heterostructures on p-type Si(111) by MBE method
We26 Ewa Przezdziecka Dual-acceptor doped p-ZnO:(As+Sb)/n-GaN heterojunctions grown by PA-MBE as a highly selective UV detector
We27 Katarzyna Racka Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
We28 Konrad Sakowski Drift-diffusion simulations of gallium nitride based heterostructures
We29 Dietmar Siche Vapour phase growth of single crystalline GaN layers in hot microwave plasma
We30 Paweł Skupiński The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
We31 Pawel Strak Absorption and emission spectra of AlN/GaN superlattice structures by DFT methods
We32 Emil Tymicki The influence of the PVT growth conditions on the SiC crystal shape
We33 Marya E. Voronchikhina The influence of atmosphere on β-Ga2O3  single crystal growth by floating zone
We34 Tomasz Wejrzanowski Modeling of growth kinetics of SiC single crystal in PVT process
We35 Ya-Fen Wu Investigations on recombination mechanisms in InGaN/AlGaN multiple quantum wells
We36 JunShuai Xue Investigation of TMIn pulse duration effect on the properties of InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
We37 Tomohiro Yamaguchi RF-MBE growth of GaN films on nitridated α-Ga2O3 buffer layer
We38 Jigang Yin Direct Comparison of ZnO single crystal grown by the hydrothermal and Pressurized melt growth method
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