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dr Paweł Skupiński
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Affiliation:
Polish Academy of Sciences, Institute of Physics
address:
al. Lotników 32/46, Warszawa, 02-668,
Poland
phone:
+48-22-8436601
fax:
+48-22-8430926
web:
http://www.ifpan.edu.pl
Participant:
E-MRS Fall Meeting 2006
began:
2006-09-04
ended:
2006-09-08
Presented:
Participant:
Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
began:
2007-05-20
ended:
2007-05-24
Presented:
Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
Preparation of the ZnO substrate surface
Participant:
E-MRS Fall Meeting 2007
began:
2007-09-17
ended:
2007-11-30
Presented:
E-MRS Fall Meeting 2007
ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
Publications:
Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
Growth of SiC by PVT method with different sources of the cerium impurity, CeO
2
or CeSi
2
Optical Characterisation of Bulk ZnO Crystals Grown by CVT
Physical properties of unique ZnO single crystals from Oława Foundry
Preparation of the ZnO substrate surface
Structure properties of bulk ZnO crystals
The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
The influence of the PVT growth conditions on the SiC crystal shape
ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
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