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dr Paweł Skupiński

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Affiliation:


Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Participant:


E-MRS Fall Meeting 2006

began: 2006-09-04
ended: 2006-09-08
Presented:

Participant:


Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began: 2007-05-20
ended: 2007-05-24
Presented:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Preparation of the ZnO substrate surface

Participant:


E-MRS Fall Meeting 2007

began: 2007-09-17
ended: 2007-11-30
Presented:

E-MRS Fall Meeting 2007

ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth

Publications:


  1. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  2. Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
  3. Optical Characterisation of Bulk ZnO Crystals Grown by CVT
  4. Physical properties of unique ZnO single crystals from Oława Foundry
  5. Preparation of the ZnO substrate surface
  6. Structure properties of bulk ZnO crystals
  7. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
  8. The influence of the PVT growth conditions on the SiC crystal shape
  9. ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.



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