In this abstract, we report an experimental investigation of the effect of TMIn pulse duration on the properties of InAlN/GaN heterostructures grown on c-plane sapphire by pulsed metal organic chemical vapor deposition (PMOCVD). It is found that the TMIn pulse duration significantly influences the structural and electron transport properties of InAlN/GaN heterostructures.

High resolution X-ray diffraction and atomic force microscopy (AFM) measurements indicate that the crystalline quality of InAlN barrier is strong dependent on the TMIn pulse time. With increasing TMIn pulse during from 0.1 to 0.4 min at intervals of 0.1 min, the indium content increases from 7.7 to 18.8 %, and a nearly lattice-matched indium content of 17 % is obtained at a TMIn pulse duration of 0.3 min. Simultaneously, an increase of electron mobility from 989 to 1538 cm²/V s and a reduction of 2DEG density from 2.69×10¹³ to 1.17×10¹³ cm^-2 accompany with the change of TMIn pulse duration. Upon an optimized TMIn pulse time of 0.3 min, a high electron mobility of 1428 cm²/V s and a 2DEG density of 1.73×10¹³ cm^-2 are achieved for nearly lattice-matched InAlN/GaN heterostructures, along with a smooth surface morphology with a root mean square roughness value of 0.21 nm observed by AFM in a 2×2 μm² scan area. While for the TMIn pulse duration of 0.1 and 0.4 min, small spiral hillocks and trench-like morphology appear on the surface of InAlN barrier, respectively. 

In our work, the different dependence of structural and electrical properties on TMIn pulse time gives a further understanding of growth mechanism, and provides a useful guide to achieve high quality InAlN/GaN heterostructures with excellent transport properties by controlling the growth parameters of PMOCVD, such as pulse number and duration, pulse overlap and waveform. The presented results demonstrate the great potential application of PMOCVD in high quality InAlN/GaN heterostructures growth. As a promising approach besides of MOCVD and MBE, PMOCVD offers some advantages and provides more degree of freedom and flexibility to epitaxy of InAlN-related electronic and optoelectronic structures. 

1. PRESENTATION: Investigation of TMIn pulse duration effect on the properties of InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition, Microsoft Office Document, 1.3MB

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1. Pulsed metal organic chemical vapor deposition growth, fabrication, and characterization of nearly lattice-matched InAlN/GaN high electron mobility transistors on sapphire substrate