Time
|
Duration
|
Type
|
Presenting person
|
Title
|
August 12th, Monday |
|
| 11:00 |
00:30:00 |
Invited oral |
Euijoon Yoon |
Hollow nanostructure-assisted growth of GaN by MOCVD and its applications |
| 11:30 |
00:15:00 |
Oral |
Baskar Krishnan |
Effect of nucleation islands coalescence on determining the quality of AlN layers grown by MOCVD |
| 11:45 |
00:15:00 |
Oral |
Bojan Mitrovic |
Effect of process conditions on wafer curvature due to thermal stresses and wafer-to-carrier temperature gradient during MOCVD growth in vertical rotating disc reactors |
| 12:00 |
00:15:00 |
Oral |
Chu-An Li |
Growth and characterizations of nonpolar InN epitaxial film on LiGaO2 substrate by halide vapor phase epitaxy |
| 12:15 |
00:15:00 |
Oral |
Alexey V. Novikov |
The epitaxial growth of Ge/Si structures on SiGe/Si(001) strain-relaxed buffers: transition from planar to island growth mode |
| 12:30 |
00:15:00 |
Oral |
Zhanna V. Smagina |
Growth of ordered Ge nanoislands on Si surface patterned by ion irradiation |
| 12:45 |
00:15:00 |
Oral |
Darrell G. Schlom |
Synthesis of defect-mitigating tunable dielectric materials by MBE |
| 15:00 |
00:30:00 |
Invited oral |
Carol Thompson |
In situ x-ray studies of epitaxial growth by MOVPE |
| 15:30 |
00:15:00 |
Oral |
Sandra Rubio |
Influence of CdS deposition technique on CdS/CdTe thin films |
| 15:45 |
00:15:00 |
Oral |
Jose Luis Plaza |
CdS and CdTe films grown by close space vapour sublimation using resistive heaters for solar cell applications: Experimental and numerical analysis |
| 16:00 |
00:15:00 |
Oral |
Hitoshi Habuka |
Low Temperature Amorphous Silicon Carbide Thin Film Formation Process on Aluminum Surface Using Monomethylsilane Gas and Trichlorosilane Gas |
| 16:15 |
00:15:00 |
Oral |
Gurvan Brasse |
Liquid phase epitaxy of rare earth doped LiYF4 layers for the elaboration of compact laser planar waveguides |
| 16:30 |
00:15:00 |
Oral |
Wester De Poel |
Epitaxial growth of molecules and salts on muscovite mica |
| 16:45 |
00:15:00 |
Oral |
Yuriy V. Zorenko |
Development of novel scintillating screens based on thesingle crystalline films of Ce doped multi-component (Gd,Y,Lu,La)3(Al,Ga,Sc)5O12 garnets by LPE method |
August 13th, Tuesday |
|
| 10:20 |
00:30:00 |
Invited oral |
Eva Monroy |
Plasma-Assisted MBE of III-nitride semiconductors: From two-dimensional layers to nanostructures |
| 10:50 |
00:30:00 |
Invited oral |
William A. Doolittle |
Growth Methodologies for Overcoming the Perceived Limitations of Phase Separation and p-type Doping in InGaN |
| 11:20 |
00:15:00 |
Oral |
Henryk Turski |
Indium incorporation mechanism during InGaN growth by plasma-assisted molecular beam epitaxy |
| 11:35 |
00:15:00 |
Oral |
Marta Sawicka |
Semipolar (2021) UV LEDs and LDs grown by PAMBE |
| 11:50 |
00:15:00 |
Oral |
Shao-fu Fu |
Effects of ceiling temperature on In incorporation and optical properties of InGaN epilayers grown by two-heater MOCVD reactor |
| 12:05 |
00:15:00 |
Oral |
Baskar Krishnan |
Structural and optical characterization of AlGaN/GaN layers |
| 14:00 |
00:30:00 |
Invited oral |
Shizuo Fujita |
Epitaxial growth of wide band gap oxide semiconductor thin films |
| 14:30 |
00:15:00 |
Oral |
Joan J. Carvajal |
Crystal growth of RbTiOPO4 epitaxial layers and optical waveguide applications |
| 14:45 |
00:15:00 |
Oral |
Elena A. Volkova |
High-temperature growth and comparative characterization of (Er,Yb):YAl3(BO3)4 and NdAl3(BO3)4 epitaxial layers |
| 15:00 |
00:15:00 |
Oral |
Weidong Wu |
The controllable growth and properties of self-assembly Ni-BaTiO3/ SrTiO3 nano-composite epitaxial film by laser molecular beam epitaxy |
| 15:15 |
00:15:00 |
Oral |
Hongyang Zhao |
Origin of the room-temperature magnetoelectric coupling in multiferroic Bi5Ti3FeO15 |
August 14th, Wednesday |
|
| 10:20 |
00:30:00 |
Invited oral |
Wolfgang Stolz |
Novel dilute nitride III/V-semiconductor laser system for the monolithic integration to Si-microelectronics |
| 10:50 |
00:15:00 |
Oral |
Hubert Valencia |
Ab initio Study of GaAs(100) Surfaces Under As2, H2, and N2 Influence, as a Model for Vapor-Phase Epitaxy of GaAs1-xNx |
| 11:05 |
00:15:00 |
Oral |
Charles Renard |
Dislocation and antiphase domain-free microscale GaAs crystals grown on SiO2 from (001) and (111) Si nano-areas |
| 11:20 |
00:15:00 |
Oral |
Stefano Sanguinetti |
Heteorepitaxy of high quality GaAs crystals on Silicon |
| 11:35 |
00:15:00 |
Oral |
Hamad A. Albrithen |
Strontium Doped ZnO Grown by Pulsed Laser Deposition: Structural and Optical Properties |
| 11:50 |
00:15:00 |
Oral |
Noriko Akutsu |
Pinning of steps near equilibrium without impurities, adsorbates, or dislocations |
