17th International Conference on Crystal Growth and Epitaxy...

 on-line journal

Presenting person

August 12th, Monday

11:00 00:30:00 Invited oral Euijoon Yoon Hollow nanostructure-assisted growth of GaN by MOCVD and its applications
11:30 00:15:00 Oral Baskar Krishnan Effect of nucleation islands coalescence on determining the quality of AlN layers grown by MOCVD
11:45 00:15:00 Oral Bojan Mitrovic Effect of process conditions on wafer curvature due to thermal stresses and wafer-to-carrier temperature gradient during MOCVD growth in vertical rotating disc reactors
12:00 00:15:00 Oral Chu-An Li Growth and characterizations of nonpolar InN epitaxial film on LiGaO2 substrate by halide vapor phase epitaxy
12:15 00:15:00 Oral Alexey V. Novikov The epitaxial growth of Ge/Si structures on SiGe/Si(001) strain-relaxed buffers: transition from planar to island growth mode
12:30 00:15:00 Oral Zhanna V. Smagina Growth of ordered Ge nanoislands on Si surface patterned by ion irradiation
12:45 00:15:00 Oral Darrell G. Schlom Synthesis of defect-mitigating tunable dielectric materials by MBE
15:00 00:30:00 Invited oral Carol Thompson In situ x-ray studies of epitaxial growth by MOVPE
15:30 00:15:00 Oral Sandra Rubio Influence of CdS deposition technique on CdS/CdTe thin films
15:45 00:15:00 Oral Jose Luis Plaza CdS and CdTe films grown by close space vapour sublimation using resistive heaters for solar cell applications: Experimental and numerical analysis
16:00 00:15:00 Oral Hitoshi Habuka Low Temperature Amorphous Silicon Carbide Thin Film Formation Process on Aluminum Surface Using Monomethylsilane Gas and Trichlorosilane Gas
16:15 00:15:00 Oral Gurvan Brasse Liquid phase epitaxy of rare earth doped LiYF4 layers for the elaboration of compact laser planar waveguides
16:30 00:15:00 Oral Wester De Poel Epitaxial growth of molecules and salts on muscovite mica
16:45 00:15:00 Oral Yuriy V. Zorenko Development of novel scintillating screens based on thesingle crystalline films of Ce doped multi-component (Gd,Y,Lu,La)3(Al,Ga,Sc)5O12 garnets by LPE method

August 13th, Tuesday

10:20 00:30:00 Invited oral Eva Monroy Plasma-Assisted MBE of III-nitride semiconductors: From two-dimensional layers to nanostructures
10:50 00:30:00 Invited oral William A. Doolittle Growth Methodologies for Overcoming the Perceived Limitations of Phase Separation and p-type Doping in InGaN
11:20 00:15:00 Oral Henryk Turski Indium incorporation mechanism during InGaN growth by plasma-assisted molecular beam epitaxy
11:35 00:15:00 Oral Marta Sawicka Semipolar (2021) UV LEDs and LDs grown by PAMBE
11:50 00:15:00 Oral Shao-fu Fu Effects of ceiling temperature on In incorporation and optical properties of InGaN epilayers grown by two-heater MOCVD reactor
12:05 00:15:00 Oral Baskar Krishnan Structural and optical characterization of AlGaN/GaN layers
14:00 00:30:00 Invited oral Shizuo Fujita Epitaxial growth of wide band gap oxide semiconductor thin films
14:30 00:15:00 Oral Joan J. Carvajal Crystal growth of RbTiOPO4 epitaxial layers and optical waveguide applications
14:45 00:15:00 Oral Elena A. Volkova High-temperature growth and comparative characterization of (Er,Yb):YAl3(BO3)4 and NdAl3(BO3)4 epitaxial layers
15:00 00:15:00 Oral Weidong Wu The controllable growth and properties of self-assembly Ni-BaTiO3/ SrTiO3 nano-composite epitaxial film by laser molecular beam epitaxy
15:15 00:15:00 Oral Hongyang Zhao Origin of the room-temperature magnetoelectric coupling in multiferroic Bi5Ti3FeO15

August 14th, Wednesday

10:20 00:30:00 Invited oral Wolfgang Stolz Novel dilute nitride III/V-semiconductor laser system for the monolithic integration to Si-microelectronics
10:50 00:15:00 Oral Hubert Valencia Ab initio Study of GaAs(100) Surfaces Under As2, H2, and N2 Influence, as a Model for Vapor-Phase Epitaxy of GaAs1-xNx
11:05 00:15:00 Oral Charles Renard Dislocation and antiphase domain-free microscale GaAs crystals grown on SiO2 from (001) and (111) Si nano-areas
11:20 00:15:00 Oral Stefano Sanguinetti Heteorepitaxy of high quality GaAs crystals on Silicon
11:35 00:15:00 Oral Hamad A. Albrithen Strontium Doped ZnO Grown by Pulsed Laser Deposition: Structural and Optical Properties
11:50 00:15:00 Oral Noriko Akutsu Pinning of steps near equilibrium without impurities, adsorbates, or dislocations
© 1998-2024 pielaszek research, all rights reserved Powered by the Conference Engine