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prof William A. Doolittle
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Affiliation:
Georgia Institute of Technology
address:
777 Atlantic Dr., Atlanta, GA, 30332-0250,
United States
phone:
fax:
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Participant:
E-MRS Fall Meeting 2005
began:
2005-09-05
ended:
2005-09-09
Presented:
E-MRS Fall Meeting 2005
Indium Nitride: A Material with Photovoltaic Promise and Challenges
Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Growth Methodologies for Overcoming the Perceived Limitations of Phase Separation and p-type Doping in InGaN
Publications:
Growth Methodologies for Overcoming the Perceived Limitations of Phase Separation and p-type Doping in InGaN
Indium Nitride: A Material with Photovoltaic Promise and Challenges
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