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dr Charles Renard
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Affiliation:
Université Paris-Sud, Institut Électronique Fondamentale
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Bâtiment 220, Orsay, 91405,
France
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Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Dislocation and antiphase domain-free microscale GaAs crystals grown on SiO
2
from (001) and (111) Si nano-areas
Publications:
Dislocation and antiphase domain-free microscale GaAs crystals grown on SiO
2
from (001) and (111) Si nano-areas
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