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In situ x-ray studies of epitaxial growth by MOVPE

Carol Thompson 1,  Edith Perret 2,  Matthew J. Highland 2,  Peter Zapol 2,  Stephen K. Streiffer 2,  Brian Stephenson 2,  Paul H. Fuoss 2

1. Northern Illinois University (NIU), De Kalb, Il 60115, United States
2. Argonne National Laboratory (ANL), 9700 C. Cass Ave., Argonne, IL 60439, United States

Abstract
In situ, time-resolved techniques can provide valuable insights into the complex interplay of mechanisms during materials synthesis and processing. Our approach has been to measure the evolution of surface structure and morphology at the atomic scale in real-time during metal-organic vapor phase epitaxy (MOVPE) by using grazing incidence x-ray scattering and x-ray fluorescence. Our vertical-flow MOVPE chamber at the Advanced Photon Source at Argonne National Laboratory is mounted on a ‘z-axis’ surface diffractometer designed specifically for this purpose. We use ~30 keV x-rays from the Advanced Photon Source to penetrate the quartz chamber walls and the reactive vapor phase. By changing the chambers and associated gas handling systems, we have studied MOVPE of oxides (e.g., PbTiO3) and III-V semiconductors.  

These x-ray based techniques combine the ability of x-rays to penetrate chamber walls and realistic complex reactive environments, with the sensitivity of surface scattering techniques to quantify atomic and nanoscale structures during growth.  In this presentation, I will discuss results from our III-nitride program; outlining both past and present examples from our in situ scattering studies of InN, GaN, and InGaN growth on GaN. I will describe the strengths and weaknesses of x-ray techniques for studying MOVPE processes and materials synthesis. X-ray experiments were carried out at beamline 12-ID-D of the Advanced Photon Source. Work supported by the U.S. Department of Energy under Contract DE-AC02-06CH11357.

 

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Presentation: Invited oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 10, by Carol Thompson
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2012-10-29 15:18
Revised:   2013-05-10 01:26