17th International Conference on Crystal Growth and Epitaxy...

 on-line journal

Presenting person

August 15th, Thursday

16:30 00:30:00 Invited oral Christian Reimann Challenges in material improvement and cost reduction for crystalline silicon for PV application
17:00 00:15:00 Oral Chih-Chen Hsieh Improvement of multi-crystalline silicon solar ingot growth by using diffusion barriers
17:15 00:15:00 Oral Kozo Fujiwara Crystal/melt interface morphology at grain boundaries of multicrystalline silicon
17:30 00:15:00 Oral Hua-Kai Lin Three-dimensional phase field modeling of silicon thin-film growth during directional solidification: facet formation and grain competition
17:45 00:15:00 Oral Ronit R. Prakash Modelling of unidirectional solidification of multicrystalline Si
18:00 00:15:00 Oral Jeffrey J. Derby The Horizontal Ribbon Growth Process for Solar Silicon: Analysis of Stability and Segregation
18:15 00:15:00 Oral Wenhan Zhao Quality evaluation of multi-crystalline silicon ingots produced in a directional solidification furnace with different theories

August 16th, Friday

08:30 00:15:00 Oral Kohei Morishita Orientation analysis of multicrystalline silicon ingots for solar cells grown by noncontact crucible method
08:45 00:15:00 Oral Kazuo Nakajima Growth of  Si large single bulk crystals for solar cells using small crucibles with a given diameter by the Noncontact Crucible method
09:00 00:15:00 Oral Leslie Lhomond Silicon crystallization by Kyropoulos process for photovoltaic applications
09:15 00:15:00 Oral Xin Liu Analysis of Argon Flow on Mass Transport in a CZ-Si Crystal Growth by Using Full Compressible Flow Solver
09:30 00:15:00 Oral Mukannan Arivanandhan Grown-in micro defects and photovoltaic characteristics of B and heavily Ge codoped CZ-Si
09:45 00:15:00 Oral Toshinori Taishi Growth of heavily tin-doped Si
10:00 00:15:00 Oral Michael Wünscher Guided gas flow as an effective mean to overcome crystal diameter limitations in FZ growth of large silicon crystals
10:15 00:15:00 Oral Bing Gao Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions
11:00 00:30:00 Invited oral Erich Kasper Epitaxy of GeSi Heterostructures on Silicon Substrates
11:30 00:15:00 Oral Kentarou Sawano Uniaxially strained Si/Ge heterostructures grown on selectively ion-implanted substrates
11:45 00:15:00 Oral Jong-Hyeok Park Selective-Growth of (100)- and (111)- Ge Thin-Films on Insulator by Interfacial-Energy-Controlled Metal-Induced-Crystallization
12:00 00:15:00 Oral Michael A. Gonik SiGe crystal growth in the absence of the crucible
12:15 00:15:00 Oral Vitaly A. Moskovskih The low thermal gradient Cz technique as a way of growing of dislocation-free germanium crystals
12:30 00:15:00 Oral Alexander Molchanov New improvements in industrial growth of silicon mono crystals for solar application by using Magnetic-Cz
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