17th International Conference on Crystal Growth and Epitaxy

Time	Duration	Type	Presenting person	Title
August 15th, Thursday
16:30	00:30:00	Invited oral	Christian Reimann	Challenges in material improvement and cost reduction for crystalline silicon for PV application
17:00	00:15:00	Oral	Chih-Chen Hsieh	Improvement of multi-crystalline silicon solar ingot growth by using diffusion barriers
17:15	00:15:00	Oral	Kozo Fujiwara	Crystal/melt interface morphology at grain boundaries of multicrystalline silicon
17:30	00:15:00	Oral	Hua-Kai Lin	Three-dimensional phase field modeling of silicon thin-film growth during directional solidification: facet formation and grain competition
17:45	00:15:00	Oral	Ronit R. Prakash	Modelling of unidirectional solidification of multicrystalline Si
18:00	00:15:00	Oral	Jeffrey J. Derby	The Horizontal Ribbon Growth Process for Solar Silicon: Analysis of Stability and Segregation
18:15	00:15:00	Oral	Wenhan Zhao	Quality evaluation of multi-crystalline silicon ingots produced in a directional solidification furnace with different theories
August 16th, Friday
08:30	00:15:00	Oral	Kohei Morishita	Orientation analysis of multicrystalline silicon ingots for solar cells grown by noncontact crucible method
08:45	00:15:00	Oral	Kazuo Nakajima	Growth of Si large single bulk crystals for solar cells using small crucibles with a given diameter by the Noncontact Crucible method
09:00	00:15:00	Oral	Leslie Lhomond	Silicon crystallization by Kyropoulos process for photovoltaic applications
09:15	00:15:00	Oral	Xin Liu	Analysis of Argon Flow on Mass Transport in a CZ-Si Crystal Growth by Using Full Compressible Flow Solver
09:30	00:15:00	Oral	Mukannan Arivanandhan	Grown-in micro defects and photovoltaic characteristics of B and heavily Ge codoped CZ-Si
09:45	00:15:00	Oral	Toshinori Taishi	Growth of heavily tin-doped Si
10:00	00:15:00	Oral	Michael Wünscher	Guided gas flow as an effective mean to overcome crystal diameter limitations in FZ growth of large silicon crystals
10:15	00:15:00	Oral	Bing Gao	Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions
11:00	00:30:00	Invited oral	Erich Kasper	Epitaxy of GeSi Heterostructures on Silicon Substrates
11:30	00:15:00	Oral	Kentarou Sawano	Uniaxially strained Si/Ge heterostructures grown on selectively ion-implanted substrates
11:45	00:15:00	Oral	Jong-Hyeok Park	Selective-Growth of (100)- and (111)- Ge Thin-Films on Insulator by Interfacial-Energy-Controlled Metal-Induced-Crystallization
12:00	00:15:00	Oral	Michael A. Gonik	SiGe crystal growth in the absence of the crucible
12:15	00:15:00	Oral	Vitaly A. Moskovskih	The low thermal gradient Cz technique as a way of growing of dislocation-free germanium crystals
12:30	00:15:00	Oral	Alexander Molchanov	New improvements in industrial growth of silicon mono crystals for solar application by using Magnetic-Cz

17th International Conference on Crystal Growth and Epitaxy...

on-line journal

August 15th, Thursday

August 16th, Friday