The morphology of the crystal/melt interface during unidirectional solidifications affects the structures of materials. The generation of crystal defects, such as dislocations, twin boundaries, and grain boundaries, and the segregation of impurities are related to the morphology of crystal/melt interface. With the increasing importance of engineering metal-impurity nanodefects in multicrystalline silicon (mc-Si) to improve solar cell properties, the distributions of metal impurities in mc-Si wafers have been extensively investigated. A high metal impurity concentration has been shown to exist at grain boundaries without low coincidence site lattice (CSL) indices. However, there have been no convincing explanations why and how metal impurities segregate at grain boundaries owing to the lack of information on the effect of grain boundaries on atomic partitioning at a crystal/melt interface. In this study, we report how grain boundaries affect crystal/melt interface morphology on the basis of in situ observation.

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