17th International Conference on Crystal Growth and Epitaxy...

No.	Presenting person	Title
We84	Madalin O. Bunoiu	Effects of Crucible Coating on the Quality of Multi-crystalline Silicon Grown by a Bridgman Technique
We85	Michael A. Gonik	Material development for directional solidification of multicrystalline silicon by AHP method
We86	Hironori Itoh	Growth of Spherical Si Crystals on Porous Si₃N₄ Substrate that Repels Si Melt
We87	Chung-Wen Lan	Grain Control by Patterned Layers in Multi-crystalline Silicon Growth by Directional Solidification
We88	Chung-Wen Lan	Development of grain structures of multi-crystalline silicon in directional solidification
We89	Ryo Matsumura	Cooling-Rate-Controlled Rapid-Melting-Growth for Giant-Single-Crystal SiGe on Insulator
We90	Yuta Nagai	Crystal growth of MCZ silicon with ultra low carbon concentration
We91	Radu-Andrei Negrila	Study of resistivity and lifetime profiles in highly polluted multi-crystalline silicon grown in a graphite crucible by a Bridgman technique
We92	Matīss Plāte	Modelling of 3D features of molten zone in FZ silicon crystal growth
We93	Anna Poklad	Impurities, precipitates, and dislocations in multicrystalline silicon grown from well-mixed and poorly mixed melts
We94	Noritaka Usami	Fabrication of large-area Si-based photonic nanostructures coupled with Ge quantum dots and their application to solar cells