Low stress, low defect density GaN was successful grown on circle array patterned Si (111) substrate using AlN as the nucleation buffer followed by two steps growth of the GaN film. Raman measurement shows a reduction of in plane biaxial stress for the GaN film grown on patterned substrate. The slight blue-shift of the band edge PL peaks further provides the evidence that the tensile stress in the GaN film was relaxed in the patterned Si substrate. It’s believed that the grain boundaries of the polycrystalline AlN buffer layer and the dislocations in the GaN film grown helped to relieve the stress induced by the lattice and the thermal coefficient mismatches during growth.

1. FULLTEXT: Evaluations of GaN film grown on patterned Si (111) templates substrates, PDF document, version 1.5, 0.7MB

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