Recently, Gallium nitride (GaN) has been applied successfully as the high performance light emitting devices (LEDs), solar-blind ultraviolet photo detectors, and high power, high temperature devices. In spite of these developments, the performance of GaN-based LEDs is commonly reduced by fundamental problems that are associated with the large lattice mismatch and thermal expansion coefficients between hetero substrates and GaN films. These problems could lead to a significant number of defects such as threading dislocations (TDs) and associated point defects. Also, the degradation of efficiency results mainly from the TDs in the GaN films. To mitigate the TDs problem, the epitaxial lateral overgrowth (ELOG), selective area growth (SAG) and patterned sapphire substrate (PSS) techniques, in situ deposited SiN_x and ex situ TiN_x have been developed and widely used to reduce TDs densities. However, these techniques require complex and expensive processes such as depositing SiO₂ thin film and removing the SiO₂ film by selective etching. 

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