One-dimensional nanostructures such as nanowires, nanorods, nanotubes, and nanobelts have attracted much interest due to their application potentials as building blocks for assembling nanoelectronics and nanophotonics. Gallium nitride (GaN) has outstanding properties such as high thermal conductivity and direct wide bandgap of 3.39eV at room temperature. It was applied for a remarkably useful material in the field of optoelectronics and high power, high temperature electronics.

In this study, The GaN nanowires were synthesized by the vapor phase epitaxy (VPE) method. The phases of GaN nanowires were varied as a function of NH₃ gas flow. The alteration of NH₃ gas flow had essentially influence on GaN nanowires synthesis. Also it was important role of confirming characteristics of GaN nanowire. The shape of GaN nanowires was confirmed by using SEM. The EDX spectra was analyzed a chemical composition of GaN nanowires. The optical characteristics of the sample were investigated by photoluminescence. And we confirmed hexagonal GaN nanowires through TEM and XRD pattern

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