The further development of the manufacturing processes of solar silicon ingot is one of the more important issues to guarantee the growth of the photovoltaic industry. The reason why is the saving of manufacturing costs of ingots, wafers, solar cells and of solar modules. Therefore, two of the main targets of the PV industry today are to increase the ingot weight and to accelerate the growing rate of polycrystalline solar ingots. One of the solutions to solve this issue is to make higher quality polycrystalline Si wafers capable of producing higher efficiency solar cells.

In this study, the directional solidification (DS) method added the heat exchanger was used to the growth of large sized polycrystalline Si ingot above 240㎏. The use of heat exchanger has the advantages of the small heat loss, short cycle time and efficient directional solidification. The numerical simulation of the process is applied using a fluid dynamics model to simulate the temperature distribution. The changes of temperature in the DS equipment are simulated by variations of thermal parameters such as heating and cooling rate.

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