In recent years, III-nitride nanostructures, such as nanoparticles, nanowires, and nanotubes, have attracted considerable attention, due to their unique electronic and optical properties. Gallium nitride (GaN) has a direct wide bandgap of 3.4 eV at room temperature and is a promising candidate material for short wavelength optoelectronic devices, such as light emitting diodes and laser diodes, as well as high power and high temperature operation devices. Forthermore, rare earth-doped GaN have a promising applications as multiple color electroluminescent (EL) devices due to the chemical stability and a large incorporation of rare earth dopants such as Eu, Er, Tb, Tm. In the case where Eu ions are doped into the host materials, distinctive optical properties are obtained, which commonly include a strong and sharp emission at around 612nm. It is caused by the f-f transitions of the Eu³⁺ ions. On the other hand, the Eu²⁺ ions show a broad blue emission at around 450nm. These two different emission effects depend on the environmental matrices surrounding the Eu ions, such as those in aluminates and silicate matrices. Compared with film and nanowires, GaN nanopowder could be alternative hybrid integration materials with a variety of optical properties because of the flexible powder form and controlled shape or size, as well as low fabrication cost.

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