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- Igor V. Osinnykh |
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Affiliation: |
Novosibirsk State University|
| address: | Pirogov 2, Novosibirsk, 630090, Russian Federation | | phone: | | | fax: | | | web: | http://nsu.ru | |
Affiliation: |
Institute of semiconductor physics|
| address: | Lavrentiev, Novosibirsk, , Russian Federation | | phone: | +7(3832)341945 | | fax: | +7(3832)332771 | | web: | | |
Participant: |
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Publications: |
- Self-compensation effect of the silicon impurity in heavily doped AlGaN layers
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