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- Konstantin A. Kokh
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phone:
+7-383-3333947
fax:
+7-383-3333947
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Affiliation:
Institute of Geology and Mineralogy SB RAS
address:
Koptyuga ave., 3, Novosibirsk, 630090,
Russian Federation
phone:
+7-383-3332406
fax:
+7-383-3332792
web:
http://imp.uiggm.nsc.ru/
Affiliation:
Novosibirsk State University
address:
Pirogov 2, Novosibirsk, 630090,
Russian Federation
phone:
fax:
web:
http://nsu.ru
Participant:
Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
began:
2007-05-20
ended:
2007-05-24
Presented:
Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
Crystallization of AgGaS
2
melts enriched with Ag
2
S and Ga
2
S
3
Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Scattering centers in as grown AgGaS
2
crystal
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Real defect structure of GaSe grown by Bridgman method
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Microstructural and vibrational properties of PVT grown Sb
2
Te
3
crystals
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Growth, optical and microstructural properties of PbB
4
O
7
plate crystals
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Formation of p/n junction in some tetradymite-type topological insulators
Publications:
Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters
Crystallization of AgGaS
2
melts enriched with Ag
2
S and Ga
2
S
3
Formation of p/n junction in some tetradymite-type topological insulators
Growth, optical and microstructural properties of PbB
4
O
7
plate crystals
Microstructural and vibrational properties of PVT grown Sb
2
Te
3
crystals
Real defect structure of GaSe grown by Bridgman method
Scattering centers in as grown AgGaS
2
crystal
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