We investigated high-brightness light emitting diodes (LEDs) appropriate for full color display applications in terms of their electrical and optical behaviors of devices performance according to the Mg doping profile at the p-cladding layer. As the undoped zone is inserted in the p-cladding layer, light output power was increased by 20% due to the hole spreading improvement. And, by increasing the hole concentration near at the active region, the light output power is increased by 41 % due to the enhancement of the hole injection into the active region and also to the minimization of the carrier overflowing problem. At an oversaturation of Mg doping with excess Cp₂Mg flow near at the active region, the internal quantum efficiency is started to degrade because of the decrease of hole concentration due to the oversaturated material problem.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/28452 must be provided.