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Hydrothermal growth of bulk ZnO:Ga crystals and their physical properties
|Mengde Ren , Xiaoling He , Yanbin Zuo 1, Haitao Zhou , Changlong Zhang , Jinliang Wang|
1. China Nonferrous Metal Guilin Geology And Mining Co., Ltd. (CNMC), Guilin 541004, China
To grow high-quality p-type ZnO layers is prerequisite to develop a low-temperature growth technique for high-quality ZnO layers.ZnO:Ga has been known as an ultra-fast scintillator for a long time, but up to now, it has not been used in practice due to the growth difficulties of ZnO:Ga single crysltals.In this paper, a large size ZnO:Ga (30.44 mm×24.84 mm×5.40 mm) with high crystalline quality was grown by Guilin hydrothermal method. The growth performed with KOH+LiOH+H2O2 as mineralizer and Ga2O3 powder for dopant . The growth characterization of ZnO:Ga influenced by concentration of Ga3+ and mineralizer was emphatically studied.We also discussed the influence of other factors including PH, temperature of dissolving growth zone and concentration of H2O2.A systematic characterization of Ga-doped ZnO was investigated by X-ray diffraction, chemical etching, X-ray rocking curve, inductively coupled plasma mass spectrometry (ICP-MS), and transimission spectrum. The results show that: 1) High-crystallinity product of ZnO:Ga single crysltal(fig. 1(a)) have been synthesized and its FWHM is 11 arcsec of the (002) reflection ofX-ray rocking curvewhich was lower than pure ZnO (fig. 1(b)). 2) ZnO:Ga crystal displays a high transmittance performence among 450-860 nm wavelength, and a total absorption performance in the wavelength range of >1750 nm. 3) ZnO:Ga crystal have a conductivity of 0.36 S/cm. A deeper pragmatic synergism between theory and experiment will greatly aid in developing more application of ZnO crystals.
Acknowledgments:This work was supported by National Natural Science Foundation of China(51102057),Guangxi Natural Science Foundation(2013GXNSFBA019262) and Program on technology development of research institute of China (2012EG115007).* corresponding author e-mail: [email protected]
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|Auxiliary resources (full texts, presentations, posters, etc.)|
Presentation: Oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 3, by Mengde Ren
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-03-31 17:27 Revised: 2013-07-23 17:25