To grow high-quality p-type ZnO layers is prerequisite to develop a low-temperature growth technique for high-quality ZnO layers.^[1]ZnO:Ga has been known as an ultra-fast scintillator for a long time, but up to now, it has not been used in practice due to the growth difficulties of ZnO:Ga single crysltals.^[2]In this paper, a large size ZnO:Ga (30.44 mm×24.84 mm×5.40 mm) with high crystalline quality was grown by Guilin hydrothermal method. The growth performed with KOH+LiOH+H₂O₂ as mineralizer and Ga₂O₃ powder for dopant . The growth characterization of ZnO:Ga influenced by concentration of Ga³⁺ and mineralizer was emphatically studied.We also discussed the influence of other factors including PH, temperature of dissolving growth zone and concentration of H₂O₂.A systematic characterization of Ga-doped ZnO was investigated by X-ray diffraction, chemical etching, X-ray rocking curve, inductively coupled plasma mass spectrometry (ICP-MS), and transimission spectrum. The results show that: 1) High-crystallinity product of ZnO:Ga single crysltal(fig. 1(a)) have been synthesized and its FWHM is 11 arcsec of the (002) reflection ofX-ray rocking curvewhich was lower than pure ZnO (fig. 1(b)). 2) ZnO:Ga crystal displays a high transmittance performence among 450-860 nm wavelength, and a total absorption performance in the wavelength range of >1750 nm. 3) ZnO:Ga crystal have a conductivity of 0.36 S/cm. A deeper pragmatic synergism between theory and experiment will greatly aid in developing more application of ZnO crystals.

Figure 1: (a). Ga:ZnO single crystal grown by hydrothermal method.(b). X-ray rocking curve of ZnO and Ga:ZnO single crystal.

Acknowledgments:This work was supported by National Natural Science Foundation of China(51102057),Guangxi Natural Science Foundation(2013GXNSFBA019262) and Program on technology development of research institute of China (2012EG115007). 

[1]. S.H.Park, H.Suzukial. Low-temperature groth of high-quality ZnO layers by surfactant-mediated molecular-beam epitaxy [J]. Journal of Crystal Growth ,2007,309:158-163

[2]. E.D.Bourrent-Courchesne, S.E.Derenzo, M.J.Weber. Development of ZnO:Ga as an ultra-fast scintillator[J]. Nuclear Instruments and Methods in Physics Research A 601(2009)358-363.

1. FULLTEXT: Hydrothermal growth of bulk ZnO:Ga crystals and their physical properties, JPEG image data, JFIF standard 1.01, 0.1MB
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