prof Koichi Kakimoto

Affiliation:

Kyushu University

Participant:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Participant:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Publications:

1. Ab initio Study of GaAs(100) Surfaces Under As₂, H₂, and N₂ Influence, as a Model for Vapor-Phase Epitaxy of GaAs_1-xN_x
2. Analysis of Argon Flow on Mass Transport in a CZ-Si Crystal Growth by Using Full Compressible Flow Solver
3. Crystal growth of 50 cm square single crystal Si by directional solidification and its characterization
4. Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions
5. Evaluation of numerical analysis of residual strain and dislocation density  in a multicrystalline silicon for solar cells
6. Influence of growth orientation on microstructure of AlN grown by solid-source solution growth (3SG) method
7. Modelling of unidirectional solidification of multicrystalline Si
8. Numerical Analysis of the Effect of Growth Rate Variations on Defect Formation in Czochralski Grown Silicon
9. Numerical investigation of crystal growth process of bulk Si, SiC and nitrides
10. Quantitative analysis of correlations between the generation of dislocations and its influencing factors during cylindrical monocrystalline silicon growth
11. Relationship between cooling flux direction and activation of slip systems of single -crystal silicon grown in [001] and [111] directions
12. Structural controllability of C clusters by template effect of SiC step
13. Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory