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Growth monitoring of nitride semiconductors at its limit
|Markus Pristovsek 1, Martin Leyer 2, Abdul Kadir 2, Michael A. Kneissl 2, Menno J. Kappers 1, Fabrice Oehler 1, Colin J. Humphreys 1|
1. University of Cambridge, Department of Material Sciences and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
Reflectance together with pyrometry and deflection (bow) measurements are nowadays standard monitoring techniques during the epitaxy of nitride semiconductors. But even with those, the composition of a typical InGaN quantum well (QW) cannot be measured during growth. Also the defects are not seen since their densities usually are not high enough to influence the reflection. The only exceptions are defects that change the topography by causing roughness or facets.
Presentation: Invited oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 6, by Markus Pristovsek
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-05-07 17:30 Revised: 2013-05-07 17:30