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The influence of surfactant and the nucleation process to InN growth by metal-organic vapor phase epitaxy

Duc V. Dinh ,  Markus Pristovsek ,  Michael A. Kneissl 

Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, Berlin 10623, Germany

Abstract
InN and group III-nitride materials have attracted great interest due to applications for optoelectronic devices because their band gaps cover range from ultra-violet to near infrared spectrum. The growth of high quality InN is still a challenge due to the lack of suitable lattice-matched substrates and low growth temperature required. The high equilibrium nitrogen vapor pressure and the low decomposition rate of ammonia result in a narrow growth window. Antimony (Sb) as a surfactant for InN growth may help to relief some of these constrains. Due to the low solubility of nitrogen in InSb and the low melting point of InSb (about 527 oC), a floating InSb layer can act as a protective layer on the InN surface to prevent nitrogen desorption. Simultaneously, the InSb layer may improve lateral transport and therefore smoothen the surface.

We have studied Sb incorporations during metal-organic vapor phase epitaxy (MOVPE) InN growth. A three-step growth process was employed to produce InN layers: nitridation, nucleation, and buffer growth. The nucleation process is a key to reduce defect densities in InN layers and thus was investigated before without Sb. The influence of Sb on these processes was systematically studied, especially for the optimum trimethylantimony (TMSb) fluxes and the most suitable sequence to introduce TMSb. Structural, optical, and electrical properties of the grown InN layers were investigated using high-resolution X-ray diffractometry, atomic force microscopy, and photoluminescence.

 

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Presentation: Poster at E-MRS Fall Meeting 2009, Symposium A, by Duc V. Dinh
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-07 13:31
Revised:   2009-06-07 00:48