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Numerical Simulation of Oxygen Transport during the Czochralski Silicon Crystal Growth with a Cusp Magnetic Field

Jyh-Chen Chen 1Wen-Chung Guo 1Ching-Hsin Chang 1Ying-Yang Teng 2Chuck Hsu 3

1. National Central Univercity, Department of Mechanical Engineering, Taoyuan 32001, Taiwan
2. Chung Shan Institute of Science and Technology, Taoyuan 32546, Taiwan
3. Sino-American Silicon Products Inc., Hsinchu 30075, Taiwan

Abstract

      The numerical simulation has been performed to investigate the effect of a cusp magnetic field on the melt flow, thermal field and oxygen concentration during the Czochralski silicon crystal growth. The results show that the oxygen concentration is decreased by the size reduction of the secondary flow cell formed between the Taylor–Proudman vortex and the buoyancy-driven one.  The size of the secondary flow cell is significantly reduced when the magnetic field is applied.  Therefore, the oxygen concentration along the melt-crystal surface decreases significantly for higher strength of magnetic field. The oxygen concentration is very sensitive to the crucible rotation. There is an optimum combination of crucible and crystal rotation for obtaining the lowest oxygen concentration.  The oxygen concentration is higher for lower argon flow rate.  The oxygen concentration decreases as zero-Gauss plane (ZGP) is moved from the free surface towards crucible bottom.  The secondary flow cell gets bigger when the ZGP is far from the free surface. Therefore, there is an optimum position of the ZGP for getting the lowest the oxygen concentration.

 

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Related papers

Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 8, by Jyh-Chen Chen
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-03-26 13:56
Revised:   2013-03-26 19:27