E-MRS Fall Meeting 2007
on-line journal
Lectures
Plenary session
Symposium A
Acta Materialia Gold Medal Workshop
Symposium B
Symposium C
Cost D30 Meeting
Symposium D
Symposium E
Symposium F
Symposium G
Genetic algorithms for beginners
Symposium H
Symposium I
Symposium J
Commercial exhibitions
Posters
Plenary session
Symposium A
Acta Materialia Gold Medal Workshop
Symposium B
Symposium C
Cost D30 Meeting
Symposium D
Symposium E
Symposium F
Symposium G
Genetic algorithms for beginners
Symposium H
Symposium I
Symposium J
Commercial exhibitions
Timetable
Plenary session
Symposium A
Acta Materialia Gold Medal Workshop
Symposium B
Symposium C
Cost D30 Meeting
Symposium D
Symposium E
Symposium F
Symposium G
Genetic algorithms for beginners
Symposium H
Symposium I
Symposium J
Commercial exhibitions
City map
Book of Abstracts
Statistics
Participants
Countries
Institutions
Presentations per country
Symposia attendance
Time
Duration
Type
Presenting person
Title
September 17th, Monday
10:00
Opening & Plenary Session -
Czochralski Award Ceremony & Acta Gold Medal Ceremony
-
Small Hall (237)
12:30
Lunch break -
Inner Courtyards
14:15
Opening - M. Godlewski -
Opening
-
room 226
14:30
Parallel Session 1 - M. Godlewski -
room 226
14:30
00:30:00
Invited
Mikko Ritala
ALD of TiO
2
based photocatalysts
15:00
00:30:00
Invited
Simon D. Elliott
Ab initio precursor design for rare earth oxide ALD
15:30
Coffee break -
Main Hall
15:50
Joint Poster Session (Part I) -
Monday & Wednesday
-
Main Hall
15:50
#C-1
Poster
Markus Bosund
Passivation of GaAs surface by using ALD technology
15:50
#C-2
Poster
Reda Cerapaite-Trusinskiene
Investigation of non-monotonous dependencies of the surface roughness on the thin film deposition parameters
15:50
#C-3
Poster
Francis Chalvet
Atomic layer deposition of HfO
2
thin films on In
0.53
Ga
0.47
As/InP substrates prepared using both aqueous and in-situ sulfur surface passivation methods
15:50
#C-5
Poster
Frederique Donsanti
Study of CIS based solar cells with a ALCVD ZnO/ZnO:Al as window layers
15:50
#C-6
Poster
Qi Fang
SiO
2
and Si
3
N
4
Films by Remote Plasma Enhanced Atomic Layer Deposition
15:50
#C-7
Poster
Hyoun Woo Kim
Crystaline Bi
2
O
3
nanofibers fabricated on sapphire substrates using a trimethylbismuth and oxygen mixture
15:50
#C-8
Poster
Yong Tae Kim
Atomic layer deposition of W-C-N diffusion barrier and its thermal stability for Cu interconnects
15:50
#C-9
Poster
Karina B. Klepper
Using carboxylic acids to grow organic-inorganic hybrid materials by ALD
15:50
#C-10
Poster
Myoung-Gyun Ko
Characterization of ruthenium titanium nitride thin films deposited by rf-direct plasma atomic layer deposition
15:50
#C-11
Poster
Raija Matero
Investigating New Precursors for Silicon Dioxide
15:50
#C-12
Poster
Ville Miikkulainen
Molybdenum nitride nanotubes
15:50
#C-13
Poster
Jan Musschoot
A comparison of thermal and plasma enhanced ALD of TiO
2
and TiN
15:50
#C-14
Poster
Heidi Nielsen
Growth of 3D core-shell nanostructures by ALD
15:50
#C-15
Poster
Ahti Niilisk
Raman characterization of strain in epitaxial Cr
2
O
3
films on sapphire
15:50
#C-16
Poster
Ola Nilsen
In situ heat analysis of ALD growth by usage of thermopile
15:50
#C-17
Poster
Raul Rammula
X-ray absorption spectroscopy as a method for structural study of HfO
2
and ZrO
2
thin films
15:50
#C-18
Poster
Mårten Rooth
Atomic Layer deposition of iron oxide nanotubes
15:50
#C-19
Poster
Koki Saito
TEM Observation of ZnO Thin Films Grown by Atomic Layer Deposition
15:50
#C-20
Poster
Paweł Skupiński
ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
15:50
#C-22
Poster
Aivar Tarre
ALD of Cr
2
O
3
on sapphire
15:50
#C-23
Poster
Eva Tois
Low Temperature Deposition of Tantalum Carbide
15:50
#C-24
Poster
Wenke Weinreich
Thermal Stability of thin ALD ZrO
2
Layers as Dielectrics in Deep Trench DRAM Devices Annealed in N
2
and NH
3
15:50
#C-25
Poster
Adam J. Zakrzewski
Application of interval analysis for determination of the parameters of the Schottky contacts
September 18th, Tuesday
09:00
Parallel Session 2 - M. Leskela -
room 226
09:00
00:30:00
Invited
Roy G. Gordon
ALD of High-k Dielectrics and Metals
09:30
00:30:00
Invited
Paul R. Chalker
Recent development in the design of cyclopentadienyl-based precursors for the ALD of high-κ thin films
10:00
00:30:00
Invited
Kaupo Kukli
Electrical properties of high-k materials prepared by ALD
10:30
Coffee break -
Main Hall
11:00
Parrallel Session 3 - R. Gordon -
room 226
11:00
00:30:00
Invited
Marco Fanciulli
In-situ investigation of the early stages of the growth by ALD of high-k dielectrics on silicon and high mobility-substrates
11:30
00:15:00
Oral
Jaan Aarik
Atomic layer deposition of crystalline Al
2
O
3
thin films
11:45
00:15:00
Oral
Indrek Jõgi
Conduction mechanisms in nanolaminates and mixture films grown by atomic layer deposition
12:00
00:15:00
Oral
Stefan Nawka
Characterization of the initial growth of hafnium silicate films in dependence of process parameters and substrate materials
12:15
00:15:00
Oral
Jaakko Niinistö
ALD of ZrO
2
Thin Films Exploiting Novel Mixed Alkylamido-Cyclopentadienyl Precursors
12:30
Lunch break -
Inner Courtyards
14:00
Parallel Session 4 - M. Ritala -
room 226
14:00
00:30:00
Invited
Sandro Ferrari
Atomic Layer Deposited Al
2
O
3
on semiconducting polymers for plastic electronics
14:30
00:15:00
Oral
Byung Joon Choi
Influence of substrates on the growth of Ge2Sb2Te5 films by combined atomic-layer- and chemical-vapor-deposition
14:45
00:15:00
Oral
Woong-Sun Kim
Plasma enhanced atomic layer deposition of titanium oxide passivation layers on polymer substrates
15:00
00:15:00
Oral
Ola Nilsen
Molecular organic - inorganic hybrid materials by atomic layer deposition
15:15
00:15:00
Oral
Karsten Henkel
Al-Oxynitride interfacial layer for PrO
x
on SiC and Si
15:30
Coffee break -
Main Hall
15:50
Parallel Session 5 - O. Nielsen -
room 226
15:50
00:30:00
Invited
Elżbieta Guziewicz
Wide band-gap II-VI semiconductors for optoelectronic applications
16:20
00:15:00
Oral
Tero Pilvi
ALD metal fluoride thin films for UV optics
16:35
00:15:00
Oral
Peter J. Evans
Characterisation and properties of low temperature ALD TiO
2
films
16:50
00:15:00
Oral
Hyun Ju Lee
Atomic-layer-deposition and local ferroelectric properties of PbTiO
3
and Pb(Zr,Ti)O
3
thin films
September 19th, Wednesday
09:30
Plenary Session -
Small Hall (237)
10:30
Coffee break -
Main Hall
11:00
Parallel Session 6 - C.S. Hwang -
room 226
11:00
00:30:00
Invited
Aleksandra M. Wojcik
Low temperature ZnMnO by ALD
11:30
00:30:00
Invited
Kornelius Nielsch
Ferromagnetic Nanostructures by Atomic Layer Deposition: From Thin Films towards Core-shell Nanotubes
12:00
00:15:00
Oral
Seongjoon Lim
High performance Transparent Thin Film Transistors from N doped atomic layer deposition ZnO
12:15
00:15:00
Oral
Matti Putkonen
Atomic layer deposition as a tool for tailoring adhesion properties of interfaces.
12:30
Lunch break -
Inner Courtyards
14:00
Parallel Session 7 - M. Fanciulli -
room 226
14:00
00:30:00
Invited
Erwin Kessels
Remote plasma ALD of oxides and nitrides: fundamentals and applications
14:30
00:30:00
Invited
Cheol Seong Hwang
Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules
15:00
00:15:00
Oral
Myoung-Gyun Ko
A study for interface of ruthenium deposited by rf-direct plasma enhanced atomic layer deposition
15:15
00:15:00
Oral
Hong-Liang Lu
Thin NiO films grown by atomic layer deposition using cyclopentadienyl-type of precursors and ozone
15:30
Coffee break
15:50
Joint Poster Session (Part II) -
Poster Award Ceremony
-
Main Hall
September 20th, Thursday
09:00
Parallel Session 8 - K. Nielsch -
room 226
09:00
00:30:00
Invited
Anders Hårsta
Template-based synthesis of single- and multi-layered metal oxide nanotubes using ALD
09:30
00:30:00
Invited
Mato Knez
(Bio)organic-Inorganic Hybrid Nanostructures by ALD
10:00
00:15:00
Oral
John L. Stickney
Electrochemical Atomic Layer Deposition
10:30
Coffee break -
Main Hall
11:00
Parallel Session 9 - J. Aarik -
room 226
11:00
00:30:00
Invited
Lauri Niinistö
Exploiting novel precursor chemistry for the growth of oxide thin films by Atomic Layer Deposition
11:30
Olympus Presentation - J. Aarik -
room 226
12:00
Closing - M. Godlewski -
room 226
12:30
Lunch break -
Inner Courtyards
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