Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 17th, Monday |
|
10:00 |
Opening & Plenary Session - Czochralski Award Ceremony & Acta Gold Medal Ceremony - Small Hall (237) |
12:30 |
Lunch break - Inner Courtyards |
14:15 |
Opening - M. Godlewski - Opening - room 226 |
14:30 |
Parallel Session 1 - M. Godlewski - room 226 |
14:30 |
00:30:00 |
Invited |
Mikko Ritala |
ALD of TiO2 based photocatalysts |
15:00 |
00:30:00 |
Invited |
Simon D. Elliott |
Ab initio precursor design for rare earth oxide ALD |
15:30 |
Coffee break - Main Hall |
15:50 |
Joint Poster Session (Part I) - Monday & Wednesday - Main Hall |
15:50 |
#C-1 |
Poster |
Markus Bosund |
Passivation of GaAs surface by using ALD technology |
15:50 |
#C-2 |
Poster |
Reda Cerapaite-Trusinskiene |
Investigation of non-monotonous dependencies of the surface roughness on the thin film deposition parameters |
15:50 |
#C-3 |
Poster |
Francis Chalvet |
Atomic layer deposition of HfO2 thin films on In0.53Ga0.47As/InP substrates prepared using both aqueous and in-situ sulfur surface passivation methods |
15:50 |
#C-5 |
Poster |
Frederique Donsanti |
Study of CIS based solar cells with a ALCVD ZnO/ZnO:Al as window layers |
15:50 |
#C-6 |
Poster |
Qi Fang |
SiO2 and Si3N4 Films by Remote Plasma Enhanced Atomic Layer Deposition |
15:50 |
#C-7 |
Poster |
Hyoun Woo Kim |
Crystaline Bi2O3 nanofibers fabricated on sapphire substrates using a trimethylbismuth and oxygen mixture |
15:50 |
#C-8 |
Poster |
Yong Tae Kim |
Atomic layer deposition of W-C-N diffusion barrier and its thermal stability for Cu interconnects |
15:50 |
#C-9 |
Poster |
Karina B. Klepper |
Using carboxylic acids to grow organic-inorganic hybrid materials by ALD |
15:50 |
#C-10 |
Poster |
Myoung-Gyun Ko |
Characterization of ruthenium titanium nitride thin films deposited by rf-direct plasma atomic layer deposition |
15:50 |
#C-11 |
Poster |
Raija Matero |
Investigating New Precursors for Silicon Dioxide |
15:50 |
#C-12 |
Poster |
Ville Miikkulainen |
Molybdenum nitride nanotubes |
15:50 |
#C-13 |
Poster |
Jan Musschoot |
A comparison of thermal and plasma enhanced ALD of TiO2 and TiN |
15:50 |
#C-14 |
Poster |
Heidi Nielsen |
Growth of 3D core-shell nanostructures by ALD |
15:50 |
#C-15 |
Poster |
Ahti Niilisk |
Raman characterization of strain in epitaxial Cr2O3 films on sapphire |
15:50 |
#C-16 |
Poster |
Ola Nilsen |
In situ heat analysis of ALD growth by usage of thermopile |
15:50 |
#C-17 |
Poster |
Raul Rammula |
X-ray absorption spectroscopy as a method for structural study of HfO2 and ZrO2 thin films |
15:50 |
#C-18 |
Poster |
Mårten Rooth |
Atomic Layer deposition of iron oxide nanotubes |
15:50 |
#C-19 |
Poster |
Koki Saito |
TEM Observation of ZnO Thin Films Grown by Atomic Layer Deposition |
15:50 |
#C-20 |
Poster |
Paweł Skupiński |
ZnO homoepitaxial growth by Atomic Layer Epitaxy technique. |
15:50 |
#C-22 |
Poster |
Aivar Tarre |
ALD of Cr2O3 on sapphire |
15:50 |
#C-23 |
Poster |
Eva Tois |
Low Temperature Deposition of Tantalum Carbide |
15:50 |
#C-24 |
Poster |
Wenke Weinreich |
Thermal Stability of thin ALD ZrO2 Layers as Dielectrics in Deep Trench DRAM Devices Annealed in N2 and NH3 |
15:50 |
#C-25 |
Poster |
Adam J. Zakrzewski |
Application of interval analysis for determination of the parameters of the Schottky contacts |
September 18th, Tuesday |
|
09:00 |
Parallel Session 2 - M. Leskela - room 226 |
09:00 |
00:30:00 |
Invited |
Roy G. Gordon |
ALD of High-k Dielectrics and Metals |
09:30 |
00:30:00 |
Invited |
Paul R. Chalker |
Recent development in the design of cyclopentadienyl-based precursors for the ALD of high-κ thin films |
10:00 |
00:30:00 |
Invited |
Kaupo Kukli |
Electrical properties of high-k materials prepared by ALD |
10:30 |
Coffee break - Main Hall |
11:00 |
Parrallel Session 3 - R. Gordon - room 226 |
11:00 |
00:30:00 |
Invited |
Marco Fanciulli |
In-situ investigation of the early stages of the growth by ALD of high-k dielectrics on silicon and high mobility-substrates |
11:30 |
00:15:00 |
Oral |
Jaan Aarik |
Atomic layer deposition of crystalline Al2O3 thin films |
11:45 |
00:15:00 |
Oral |
Indrek Jõgi |
Conduction mechanisms in nanolaminates and mixture films grown by atomic layer deposition |
12:00 |
00:15:00 |
Oral |
Stefan Nawka |
Characterization of the initial growth of hafnium silicate films in dependence of process parameters and substrate materials |
12:15 |
00:15:00 |
Oral |
Jaakko Niinistö |
ALD of ZrO2 Thin Films Exploiting Novel Mixed Alkylamido-Cyclopentadienyl Precursors |
12:30 |
Lunch break - Inner Courtyards |
14:00 |
Parallel Session 4 - M. Ritala - room 226 |
14:00 |
00:30:00 |
Invited |
Sandro Ferrari |
Atomic Layer Deposited Al2O3 on semiconducting polymers for plastic electronics |
14:30 |
00:15:00 |
Oral |
Byung Joon Choi |
Influence of substrates on the growth of Ge2Sb2Te5 films by combined atomic-layer- and chemical-vapor-deposition |
14:45 |
00:15:00 |
Oral |
Woong-Sun Kim |
Plasma enhanced atomic layer deposition of titanium oxide passivation layers on polymer substrates |
15:00 |
00:15:00 |
Oral |
Ola Nilsen |
Molecular organic - inorganic hybrid materials by atomic layer deposition |
15:15 |
00:15:00 |
Oral |
Karsten Henkel |
Al-Oxynitride interfacial layer for PrOx on SiC and Si |
15:30 |
Coffee break - Main Hall |
15:50 |
Parallel Session 5 - O. Nielsen - room 226 |
15:50 |
00:30:00 |
Invited |
Elżbieta Guziewicz |
Wide band-gap II-VI semiconductors for optoelectronic applications |
16:20 |
00:15:00 |
Oral |
Tero Pilvi |
ALD metal fluoride thin films for UV optics |
16:35 |
00:15:00 |
Oral |
Peter J. Evans |
Characterisation and properties of low temperature ALD TiO2 films |
16:50 |
00:15:00 |
Oral |
Hyun Ju Lee |
Atomic-layer-deposition and local ferroelectric properties of PbTiO3 and Pb(Zr,Ti)O3 thin films |
September 19th, Wednesday |
|
09:30 |
Plenary Session - Small Hall (237) |
10:30 |
Coffee break - Main Hall |
11:00 |
Parallel Session 6 - C.S. Hwang - room 226 |
11:00 |
00:30:00 |
Invited |
Aleksandra M. Wojcik |
Low temperature ZnMnO by ALD |
11:30 |
00:30:00 |
Invited |
Kornelius Nielsch |
Ferromagnetic Nanostructures by Atomic Layer Deposition: From Thin Films towards Core-shell Nanotubes |
12:00 |
00:15:00 |
Oral |
Seongjoon Lim |
High performance Transparent Thin Film Transistors from N doped atomic layer deposition ZnO |
12:15 |
00:15:00 |
Oral |
Matti Putkonen |
Atomic layer deposition as a tool for tailoring adhesion properties of interfaces. |
12:30 |
Lunch break - Inner Courtyards |
14:00 |
Parallel Session 7 - M. Fanciulli - room 226 |
14:00 |
00:30:00 |
Invited |
Erwin Kessels |
Remote plasma ALD of oxides and nitrides: fundamentals and applications |
14:30 |
00:30:00 |
Invited |
Cheol Seong Hwang |
Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules |
15:00 |
00:15:00 |
Oral |
Myoung-Gyun Ko |
A study for interface of ruthenium deposited by rf-direct plasma enhanced atomic layer deposition |
15:15 |
00:15:00 |
Oral |
Hong-Liang Lu |
Thin NiO films grown by atomic layer deposition using cyclopentadienyl-type of precursors and ozone |
15:30 |
Coffee break |
15:50 |
Joint Poster Session (Part II) - Poster Award Ceremony - Main Hall |
September 20th, Thursday |
|
09:00 |
Parallel Session 8 - K. Nielsch - room 226 |
09:00 |
00:30:00 |
Invited |
Anders Hårsta |
Template-based synthesis of single- and multi-layered metal oxide nanotubes using ALD |
09:30 |
00:30:00 |
Invited |
Mato Knez |
(Bio)organic-Inorganic Hybrid Nanostructures by ALD |
10:00 |
00:15:00 |
Oral |
John L. Stickney |
Electrochemical Atomic Layer Deposition |
10:30 |
Coffee break - Main Hall |
11:00 |
Parallel Session 9 - J. Aarik - room 226 |
11:00 |
00:30:00 |
Invited |
Lauri Niinistö |
Exploiting novel precursor chemistry for the growth of oxide thin films by Atomic Layer Deposition |
11:30 |
Olympus Presentation - J. Aarik - room 226 |
12:00 |
Closing - M. Godlewski - room 226 |
12:30 |
Lunch break - Inner Courtyards |