Atomic layer deposition of Al₂O₃ from vapors of AlCl₃ and H₂O was studied in the substrate temperature range of 200–900°C in order to explore possibilities for growing crystalline films. On single crystal silicon and amorphous silica substrates, the films started to crystallize at temperatures exceeding 600°C being, however, of relatively poor crystallinity even when grown at temperatures as high as 800–900°C. Nevertheless, a marked increase of density and refractive index was observed with appearance of crystalline phase in the films. On single crystal sapphire substrates as well as on epitaxial TiO₂ and SnO₂, epitaxial Al₂O₃ films were successfully obtained at 700°C and higher temperatures. On epitaxial Cr₂O₃, by contrast, the substrate temperature as low as 500°C was sufficient to grow epitaxial Al₂O₃.

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