No.
|
Presenting person
|
Title
|
|
Adrien Tribu |
Optical properties of ZnSe and CdSe/ZnSe single nanowires. |
H/PII.01 |
Madhu Bhaskaran |
Effect of multi-layered bottom electrodes on the orientation of stronium-doped lead zirconate titanate thin films |
H/PI.01 |
Bożena B. Bierska-Piech |
The optimalization of the registration condition for the X-ray reflectivity of real multilayer thin films |
PI.02 |
Maria Branescu |
Raman spectra intensity as a function of the penetration depth of the visible light in the in-situ grown YBCO films |
H/PII.02 |
Mariuca Gartner |
TiON as multifunctional nanostructured film |
H/PI.03 |
Chikh Houria |
High temperatures X-ray diffraction study of Tantalum – Oxygen phases |
H/PII.03 |
Hyoun Woo Kim |
Growth and characterization of doped Ga2O3 and SnO2 nanofibers using GaN and Sn powder mixtures |
H/PI.04 |
Janusz Jaglarz |
Fourier analysis of optical profilometry and BRDF in paints art investigations |
H/PII.04 |
Marc Lamy de la Chapelle |
Surface-enhanced Raman scattering of gold nanowires : role of dipolar and multipolar localized surface plasmons |
H/PI.05 |
Ghenadii Korotcenkov |
SnO2 films deposited by spray pyrolysis: Intensity of XRD as a parameter for structural characterization |
H/PII.05 |
Tivadar Lohner |
Comparative ellipsometric and ion beam analytical studies on ion beam crystallized silicon implanted with Zn and Pb ions |
H/PI.06 |
Ghenadii Korotcenkov |
Spectroscopic cathodoluminescence study of nanostructured SnO2 films deposited by spray pyrolysis |
H/PII.06 |
Marek S. Michalec |
Skew asymmetric arrangement of X-ray diffraction for structural diagnostics of multi-layer semiconductor materials |
H/PI.07 |
Jacek Kucytowski |
Influence of Nd dopants to change of lattice parameters in YVO4 single crystals. |
H/PI.08 |
István E. Lukács |
Sub-pixel detection of a grid’s node positions for optical diagnostics |
H/PII.08 |
Przemysław Romanowski |
Effect of high pressure annealing on defect structure of GaMnAs |
H/PI.09 |
Wojciech Maziarz |
Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers |
H/PII.09 |
Kresimir Salamon |
X-ray study of Ge nanoparticle formation in Ge:SiO2/SiO2 multilayers |
H/PI.10 |
Dmitry Mogilyanski |
Anisotropy of sapphire tube-shaped single crystal |
H/PII.10 |
Witold Rzodkiewicz |
Methods of stress investigations in dielectric layer of MIS structures |
H/PI.11 |
Károly Somogyi |
Influence of Illumination and Decay of Electrical Resistance of ITO Nanoscale Layers |
H/PII.12 |
Károly Somogyi |
An RBS Study of Thin PLD and MOCVD Strontium Copper Oxide Layers |
H/PI.12 |
Károly Somogyi |
Surface Scattering Optical Loss Measurements in Thin Oxide Planar Waveguide Layers |
H/PI.13 |
Jung Hyun Jeong |
Luminescence properties of Ca3MgSi2O8:Eu2+ thin film phosphors by a pulsed laser deposition |
H/PII.13 |
Assunta Vigliante |
Advances in X-ray Characterization. |
H/PI.14 |
Rodica Plugaru |
Optical properties of nanocrystalline titanium oxide |
H/PII.14 |
Fu Lung Wong |
Lifetime improvement of organic light-emitting diodes using silicon oxy-nitride as anode modifier |
H/PII.15 |
Olivier Durand |
Investigation of lanthanum and hafnium-based dielectric films by X-ray reflectivity, spectroscopic ellipsometry and X-ray photoelectron spectroscopy |
H/PI.15 |
Mariuca Gartner |
Hydoxyapatite films obtained by sol-gel and sputtering methods |
H/PII.16 |
Jens-Peter Biethan |
New results in calculating critical thickness and the degree of relaxation for epitaxial grown Silicon-Germanium layers on Silicon |
H/PI.16 |
Claire C. Ramboz |
Advances in micro-crystalline inclusion multi-elementary analysis (12<Z<92) by coupled absolute PIXE and RBS |
H/PII.17 |
Viatcheslav A. Mishurnyi |
Influence of the substrate orientation on the composition of solid solutions grown by LPE and MOCVD |
H/PII.18 |
Pawel Dominik |
Single crystals of gallium nitride doped with gadolinium- synthesis and properties. |
H/PI.18 |
Ratiba H. Outemzabet |
Highly oriented doped and undoped tin oxide thin films grown on multicrystalline silicon substrate. |
H/PI.19 |
Woo-Seok Cheong |
Transparent thin-film transistors with zinc oxide active layer fabricated using metal zinc |
H/PII.19 |
István E. Lukács |
Makyoh-topography study of the swirl defect in Si wafers |
H/PII.20 |
Odette Chaix |
Phase transformation during the annealing of thin films in Sr-Cu-O system analyzed with in situ studies by X-ray diffraction and Raman spectroscopy |
H/PI.20 |
Hassan Shirazi |
Determination of dislocation density and crystallite size distribution in deformed lath martensite by X-ray peak profile analysis |
H/PI.21 |
Przemysław Romanowski |
Structure of Si:Mn annealed under enhanced stress conditions |