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- Jens-Peter Biethan

e-mail: ***@hfe.tu-darmstadt.de
phone: +49-6151-163462
fax: +49-6151-164367
web:
interest(s):

Affiliation:

Darmstadt University of Technology, Department of High Frequency Electronics

address: Merckstr. 25, Darmstadt, 64283, Germany
phone:
fax:
web: http://www.hf.e-technik.tu-darmstadt.de/en/labs/mwe/index.php

Participant:

E-MRS Fall Meeting 2007

began: 2007-09-17
ended: 2007-11-30
Presented:
E-MRS Fall Meeting 2007
New results in calculating critical thickness and the degree of relaxation for epitaxial grown Silicon-Germanium layers on Silicon

Participant:

E-MRS Fall Meeting 2008

began: 2008-09-15
ended: 2008-09-19
Presented:
E-MRS Fall Meeting 2008
In situ interferometry characterization of MOCVD grown ZnO on (100)-silicon

Participant:

E-MRS Fall Meeting 2009

began: 2010-09-14
ended: 2010-09-18
Presented:

Publications:
  1. In situ interferometry characterization of MOCVD grown ZnO on (100)-silicon
  2. New results in calculating critical thickness and the degree of relaxation for epitaxial grown Silicon-Germanium layers on Silicon



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