This paper discusses the results from Bragg-Brentano X-ray diffraction (XRD) and glancing angle X-ray diffraction (GA-XRD) analysis of piezoelectric strontium-doped lead zirconate titanate (PSZT) thin films deposited on multi-layer coatings on silicon. The films were deposited by RF magnetron sputtering, and a metal coated substrate was desired to exploit the pronounced piezoelectric effect that is theoretically expected normal to the substrate. This highlighted the influence that the bottom electrode architecture had on the final crystalline structure and surface roughness of the deposited thin films. A number of bottom electrode architectures were used, with the uppermost metal layer on which PSZT was deposited being gold or platinum. The choice and the thickness of the intermediate adhesion layers influenced the intensity, and in some cases, the presence of the desired perovskite peaks.

Gold was chosen as its lattice co-efficients were closely matched to that of PSZT; and considering the gold-silicon eutectic point of 363 ºC, deposition on gold coated substrates was limited to 300 ºC. Inter-diffusion between gold, the titanium adhesion layer, and silicon was observed. A silicon dioxide layer was introduced to overcome the inter-diffusion, and appeared to have an effect on the final crystalline state, which was determined using XRD.

For platinum bottom electrodes (which are preferred choice in literature), a number of multi-layer combinations were experimented with; these included different combinations and thicknesses of platinum, titanium, titanium dioxide, and silicon dioxide. Depositions were carried out at temperatures ranging from 500 ºC to 750 ºC, with post deposition annealing performed in certain cases. This paper shows the different reactions which occur, and highlights cases in which changing the bottom electrode architecture distinguished the dominant perovskite orientation.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/10979 must be provided.

1. Analytical and finite element modelling of an ohmic contact test structure for low specific contact resistivity
2. In situ investigation of thermally influenced phase transformations in (Pb_0.92Sr_0.08)(Zr_0.65Ti_0.35)O₃ thin films using micro-Raman spectroscopy and X-ray diffraction
3. In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon
4. Influence of oxygen partial pressure on the composition and orientation of stronium-doped lead zirconate titanate thin films
5. Investigation of nickel silicide to silicon interface using transmission electron microscopy
6. Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques
7. Piezoelectric response characterization using atomic force microscopy with standard contact-mode imaging
8. Investigation of composition irregularities and inter-diffusion in strontium-doped lead zirconate titanate thin films on gold-coated silicon substrates