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Influence of Nd dopants to change of lattice parameters in YVO4 single crystals.

Jacek Kucytowski 1Krystyna B. Wokulska 1Tadeusz Łukasiewicz 2Jerzy Bodzenta 3Monika Pyka 3Władysław Hofman 2Anna M. Kaźmierczak-Bałata 3

1. University of Silesia, Institute of Material Science, Bankowa 12, Katowice 40-007, Poland
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
3. Silesian University of Technology, Institute of Physics, Krzywoustego 2, Gliwice 44-100, Poland

Abstract

YVO4 single crystals (yttrium orthovanadate) are interesting materials for laser and optical application. The pure YVO4 single crystal (crystallized in D4h19 - I 41/amd space group) can be used for making polarizers, beam displacers and optical isolators due to its large birefringence (ne – no = 0.223 at 1.06 mm). Compared with the YAG laser crystals, the Nd-doped YVO4 crystal has a low pumping threshold, large emission section (2.7 times at 1.06 mm), large absorption coefficient (4 times), wide absorptive area at 809 nm and strongly polarized laser output and low susceptibility to gamma and electron irradiations. It is an excellent material for making the diode-pumped solid lasers.

The influence of neodymum doping of YVO4 single crystals has been studied. These crystals have been grown by means of Czochralski method. One of them has been pure YVO4, others have been doped with the Nd (YVO4:1% at. Nd, YVO4:2% at. Nd and YVO4:5% at. Tm+0.4%Ca).

The precise changes of the lattice parameters were determined by the X-ray diffraction method – the Bond method (δd/d =10-6). The lattice parameters was measured on symmetric reflections 800 and 008 CuKα1, λ=0.15405929 ± 5×10-7. We have observed increase of the lattice parameters with the increasing concentration of Nd atoms and slighty changes of the unit cell volume. These changes are connected with site location of the atom dopants in YVO4 crystal structure.

 

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Presentation: Poster at E-MRS Fall Meeting 2007, Symposium H, by Jacek Kucytowski
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-11 16:20
Revised:   2009-06-07 00:44