Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 17th, Monday |
|
| 14:30 |
00:30:00 |
Invited |
Mikko Ritala |
ALD of TiO2 based photocatalysts |
| 15:00 |
00:30:00 |
Invited |
Simon D. Elliott |
Ab initio precursor design for rare earth oxide ALD |
September 18th, Tuesday |
|
| 09:00 |
00:30:00 |
Invited |
Roy G. Gordon |
ALD of High-k Dielectrics and Metals |
| 09:30 |
00:30:00 |
Invited |
Paul R. Chalker |
Recent development in the design of cyclopentadienyl-based precursors for the ALD of high-κ thin films |
| 10:00 |
00:30:00 |
Invited |
Kaupo Kukli |
Electrical properties of high-k materials prepared by ALD |
| 11:00 |
00:30:00 |
Invited |
Marco Fanciulli |
In-situ investigation of the early stages of the growth by ALD of high-k dielectrics on silicon and high mobility-substrates |
| 11:30 |
00:15:00 |
Oral |
Jaan Aarik |
Atomic layer deposition of crystalline Al2O3 thin films |
| 11:45 |
00:15:00 |
Oral |
Indrek Jõgi |
Conduction mechanisms in nanolaminates and mixture films grown by atomic layer deposition |
| 12:00 |
00:15:00 |
Oral |
Stefan Nawka |
Characterization of the initial growth of hafnium silicate films in dependence of process parameters and substrate materials |
| 12:15 |
00:15:00 |
Oral |
Jaakko Niinistö |
ALD of ZrO2 Thin Films Exploiting Novel Mixed Alkylamido-Cyclopentadienyl Precursors |
| 14:00 |
00:30:00 |
Invited |
Sandro Ferrari |
Atomic Layer Deposited Al2O3 on semiconducting polymers for plastic electronics |
| 14:30 |
00:15:00 |
Oral |
Byung Joon Choi |
Influence of substrates on the growth of Ge2Sb2Te5 films by combined atomic-layer- and chemical-vapor-deposition |
| 14:45 |
00:15:00 |
Oral |
Woong-Sun Kim |
Plasma enhanced atomic layer deposition of titanium oxide passivation layers on polymer substrates |
| 15:00 |
00:15:00 |
Oral |
Ola Nilsen |
Molecular organic - inorganic hybrid materials by atomic layer deposition |
| 15:15 |
00:15:00 |
Oral |
Karsten Henkel |
Al-Oxynitride interfacial layer for PrOx on SiC and Si |
| 15:50 |
00:30:00 |
Invited |
Elżbieta Guziewicz |
Wide band-gap II-VI semiconductors for optoelectronic applications |
| 16:20 |
00:15:00 |
Oral |
Tero Pilvi |
ALD metal fluoride thin films for UV optics |
| 16:35 |
00:15:00 |
Oral |
Peter J. Evans |
Characterisation and properties of low temperature ALD TiO2 films |
| 16:50 |
00:15:00 |
Oral |
Hyun Ju Lee |
Atomic-layer-deposition and local ferroelectric properties of PbTiO3 and Pb(Zr,Ti)O3 thin films |
September 19th, Wednesday |
|
| 11:00 |
00:30:00 |
Invited |
Aleksandra M. Wojcik |
Low temperature ZnMnO by ALD |
| 11:30 |
00:30:00 |
Invited |
Kornelius Nielsch |
Ferromagnetic Nanostructures by Atomic Layer Deposition: From Thin Films towards Core-shell Nanotubes |
| 12:00 |
00:15:00 |
Oral |
Seongjoon Lim |
High performance Transparent Thin Film Transistors from N doped atomic layer deposition ZnO |
| 12:15 |
00:15:00 |
Oral |
Matti Putkonen |
Atomic layer deposition as a tool for tailoring adhesion properties of interfaces. |
| 14:00 |
00:30:00 |
Invited |
Erwin Kessels |
Remote plasma ALD of oxides and nitrides: fundamentals and applications |
| 14:30 |
00:30:00 |
Invited |
Cheol Seong Hwang |
Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules |
| 15:00 |
00:15:00 |
Oral |
Myoung-Gyun Ko |
A study for interface of ruthenium deposited by rf-direct plasma enhanced atomic layer deposition |
| 15:15 |
00:15:00 |
Oral |
Hong-Liang Lu |
Thin NiO films grown by atomic layer deposition using cyclopentadienyl-type of precursors and ozone |
September 20th, Thursday |
|
| 09:00 |
00:30:00 |
Invited |
Anders Hårsta |
Template-based synthesis of single- and multi-layered metal oxide nanotubes using ALD |
| 09:30 |
00:30:00 |
Invited |
Mato Knez |
(Bio)organic-Inorganic Hybrid Nanostructures by ALD |
| 10:00 |
00:15:00 |
Oral |
John L. Stickney |
Electrochemical Atomic Layer Deposition |
| 11:00 |
00:30:00 |
Invited |
Lauri Niinistö |
Exploiting novel precursor chemistry for the growth of oxide thin films by Atomic Layer Deposition |
