The extension of the atomic layer deposition (ALD) technique with plasma processes (i.e., plasma-assisted ALD) is actively being researched as it can provide several potential advantages over thermal ALD for selected applications such as an enhanced growth rate, improved material properties, and lower deposition temperature (down to room temperature). In this contribution, an overview is presented of the deposition of several oxides (Al₂O₃, HfO₂, TiO₂) and nitrides (TiN, TaN) by plasma-assisted ALD. Results are presented as obtained by remote plasma ALD, a plasma configuration that distinguishes itself from direct plasma ALD and radical enhanced ALD by a high degree of reactivity combined with virtually no surface damage due to plasma ions. Remote plasma ALD processes based on halide and metalorganic precursors and plasmas of H₂, N₂, O₂, NH₃ and combinations thereof will be described and the resulting material properties will be presented for wide substrate temperature ranges. The versatility of the plasma-assisted ALD process will be illustrated by several applications ranging from the semiconductor industry (capacitor stacks) to emerging applications in the field of 3D-integration in microelectronics (Cu diffusion barriers), photovoltaics (Si surface passivation), energy storage (Li diffusion barriers) and flexible electronics (ultrahigh moisture barrier coatings). Generic insight into the plasma-assisted ALD surface reactions will be presented from mechanistic studies carried out by a variety of in situ techniques: spectroscopic ellipsometry (film thickness, optical properties and crystal phases), transmission infrared spectroscopy (surface species and reaction products), mass spectrometry (reaction products), quartz crystal microbalance measurements (surface mass uptake), and optical emission spectroscopy (plasma emission and reaction products).

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