Selection of an appropriate precursor is a critical first step in developing ALD processes. Many precursor properties are required: sufficient vapor pressure at a temperature at which decomposition is negligible, self-limiting deposition reactions that produce a pure product at a high enough rate on suitable substrates, a synthesis procedure that produces a sufficiently pure precursor at a cost that is low enough for applications, and long shelf life. Several other precursor properties are desirable: low melting points (preferably below room temperature), low toxicity, and non-corrosive precursors and reaction byproducts.

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