Organic light-emitting diodes (OLED) have been intensively studied, but the organic and cathode materials of OLED devices are easily degraded by water vapor and high deposition temperature. It is widely reported that the upper limit requirement for a water vapor transmission rate (WVTR) for an OLED is 1x10^-6 g/m²·day. In this work, we demonstrate the ability to form a passivation film that obtains a good titanium dioxide WVTR value. Titanium oxide thin films was conducted using Tetrakis dimethylamino titanium (TDMATi) and an oxygen plasma on a polyethersulfon (PES) substrate at a deposition temperature of 90 ℃ by plasma enhanced atomic layer deposition (PEALD). In order to investigate structual behaviors, morphology and chemical composition of deposited films, we used X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM). WVTR measurements on titanium oxide films were performd using a MOCON Corporation system. The titanium oxide film thicknesses with number of cycles were measured using cross sectional transmission electron microscopy (TEM) images and ellipsometer. The effects of the induced plasma power on passivation properties were investigated according to film thickness. The growth rate of the titanium oxide film was 0.8 Å/cycle, and the water vapor transition rate (WTVR) for a 80 nm titanium oxide film was 0.023 g/m^2.day.

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