As the silicon process migrates to small device geometries, new deposition process technology will be required to solve the problems obtained with high trench capacitor and ultra thin gate oxide. Attempts to deposit material with atomic level control, atomic layer deposition as a technique which can be available good film uniformity and excellent step coverage have been reported. Ruthenium is a rare element has low electrical resistivity, high chemical inertness, thermal stability and hardness. Especially, ALD of ruthenium thin films using the metal electrode for trench DRAM capacitor have been researched because the films have not only excellent uniformity also high work function energy of deposited films. Moreover, ALD titanium nitride film has thermal stability below 900 degree C. In this work, we have studied radio-frequency direct plasma enhanced atomic layer deposition (PEALD) growth of ruthenium titanium nitride (RuTiN) film. Ruthenium thin films were prepared by Ru(EtCp)₂ as a ruthenium precursor gas and ammonia as a reactant gas. Titanium nitride films growth was using Ti[N(CH₃)]₄ as a titanium precursor gas and ammonia as a reactant gas. RuTiN thin films were prepared with various ratio of ruthenium and titanium nitride process window. In order to investigate physical, electrical properties and impurity of deposited films HRXRD, HRTEM, XPS, Rs measurement and RBS were used. According to formations of agglomeration sites, electrical behavior changed with RTA treatment with ambient O₂. The thermal stability of RuTiN thin films deposited by ALD was affected by structural changes such as carbon contamination in the film.

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1. A study for interface of ruthenium deposited by rf-direct plasma enhanced atomic layer deposition
2. Plasma enhanced atomic layer deposition of titanium oxide passivation layers on polymer substrates