Search for content and authors
 

Comparative ellipsometric and ion beam analytical studies on ion beam crystallized silicon implanted with Zn and Pb ions

Tivadar Lohner 1,  Christo Angelov 2,  Valdek Mikli 3

1. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, Budapest H-1525, Hungary
2. Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, Sofia 1784, Bulgaria
3. Tallinn University of Technology,Centre for Materials Research (TUT), Ehitajate tee 5, Tallinn 19086, Estonia

Abstract
The near-surface structural changes of silicon implanted with Zn and Pb ions and subsequently crystallized using high energy silicon ion beam or annealed thermally have been studied by spectroscopic ellipsometry and Rutherford Backscattering Spectrometry in combination with channeling. Zn and Pb ions were implanted at 100 keV into silicon, in order to form amorphous layers. Ion Beam Induced Epitaxial Crystallization of the implanted amorphous silicon was induced at 400oC using 3 MeV Si+ ion beam. Rutherford Backscattering Spectrometry and channeling techniques were applied to measure the thickness of the as-implanted amorphous as well as ion beam recrystallized layers and to obtain the depth distribution of Zn and Pb. Spectroscopic ellipsometry measurements were performed to determine the thickness of the surface oxide layer as well as the thickness of the amorphous and the recrystallized silicon layers. The evaluation of the ellipsometry data was carried out using different optical models consisting of a surface layer, one or more underlying layers and single crystalline silicon substrate. The dielectric function of single crystalline silicon, silicon dioxide, ion implantation amorphized silicon and the implanted-annealed silicon were taken from Refs [1] and [2]. In the case of Pb implantation the thermal annealing (525oC, 60 min) was not enough for the complete recrystallization of the implanted silicon layer. The highest annealing dose (of the 3 MeV Si+ ion beam) was sufficient for almost complete recrystallization of the ion implantation amorphized silicon layers for both implanted species.

References

[1] Handbook of Optical Constants of Solids, edited by E. D. Palik (Academic Press, 1985)

[2] M. Fried, T. Lohner, W.A.M. Aarnink, L.J. Hanekamp, A. van Silfhout, Journal of Applied Physics 71 (1992) 5260

 

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/11574 must be provided.

 

Related papers
  1. Nanocrystals characterization in porous silicon using model dielectric function
  2. Ellipsometric and ion beam analytical studies on sputtered and annealed niobium oxide thin films
  3. High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

Presentation: Poster at E-MRS Fall Meeting 2007, Symposium H, by Tivadar Lohner
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 14:56
Revised:   2009-06-07 00:44