There are differences in In-doping mechanisms of II-VI compounds. Doping with In-dopant of some compounds gives rise to large concentrations of donors, but often the electron concentration is a small fraction of the donor concentration as a result of self-compensation with formation of complex. In this report high temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe:In and of CdSe:In are compared to construct the high temperature defect equilibrium (HTDE) models of these systems as we made earlier for II-VI systems doped with Al and Ga [1,2]. When HTEC isotherms and isobars of ZnSe:In and of CdSe:In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the measurements under the selenium vapor pressure. Measured at the last conditions ZnSe:In HTEC isotherms are characterized by the conductivity type conversion but no change of HTEC type is observed on CdSe:In isotherms. Under these conditions the activation energy for ZnSe:In isobars is ΔE = 1.3 - 1.6 eV and for CdSe:In is ΔE = 1.3eV. The onefold ionized substitutional In at metal component place is proposed to be compensated by native defects in ZnS:In and in CdSe:In at high selenium component vapour pressure. The native defect for compensation may be onefold ionized zinc vacancy for ZnSe:In and twofold ionized zinc vacancy for CdSe:In. Defect associations occur at lower temperatures. HTDE models under selenium component vapor pressure conditions are presented and compared.

[1] K. Lott, T. Nirk, and S. Shinkarenko, Solid State Ionics, 173 (2004) 83.

[2] K. Lott, T. Nirk, O. Volobujeva, S. Shinkarenko, L. Türn, U. Kallavus, A. Grebennik, and A. Vishnjakov, Physica B, 376-377 (2006) 764.

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