One of the most exciting areas in materials science is the study of nanomaterials, due to their novel physical properties steming from the reduced dimensions. Since monoclinic gallium oxide (b-Ga₂O₃) is chemically and thermally stable with a band gap of 4.8 eV, the b-Ga₂O₃ with low-dimensional nanostructure will likely provide an attractive promise for its practical application as well as for fabricating nanodevices with novel properties. Particularly, Ga₂O₃ has gained much attention as a new phosphor material for emissive display applications. In addition, Tin oxide (SnO₂), an n-type semiconductor with a wide band gap (E_g=3.6 eV at 300 K), is regarded as one of the most promising materials for gas sensors, heat mirrors, photovoltaic solar energy conversion devices, and transparent electrodes. Accordingly, various structural and morphological forms of SnO₂ 1D nanostructures have been fabricated over the past several years. Herein, we have investigated the production of gallium oxide (Ga₂O₃) and tin oxide (SnO₂) one-dimensional (1D) nanostructures by heating a mixture of GaN and Sn powders at 900^ºC. TEM analysis revealed that the product corresponded to a mixture of monoclinic Ga₂O₃ nanofibers and tetragonal rutile SnO₂ nanofibers. EDX spectra suggested that Ga₂O₃ and SnO₂ nanofibers were doped with Sn and Ga elements, respectively. The PL measurement with a Gaussian fitting exhibited visible light emission bands centered at 445, 572, and 665 nm.

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