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Phase transformation during the annealing of thin films in Sr-Cu-O system analyzed with in situ studies by X-ray diffraction and Raman spectroscopy
|Odette Chaix 1, Herve Roussel 1, Afzal Khan 1, Jean-Luc Deschanvres 1, Carmen Jimenez 1, Bernard Servet 2, Olivier Durand 2, Mircea Modreanu 3|
1. INPG, Laboratoire des Materiaux et du Genie Physique (LMGP), BP 46, Grenoble 38402, France
Divalent ion in a copper oxide matrix M2+Cu2O2 are intensively studied for the application field of p-type transparent conductive oxide in order to achieve transparent electronic devices. In this paper, we have studied the phase transformation during the annealing of thin films in Sr-Cu-O system analyzed with in situ studies by X-ray diffraction and Raman spectroscopy. The Sr-Cu-O were deposited on silicon wafer by means of an injection-MOCVD apparatus. FTIR and XRD analyses have shown that the films were composed of a mixture of copper oxide (CuO) and strontium carbonate. This later compound is due to the low deposition temperature. So, to achieve the SrCu2O2 compound, it is necessary to anneal the samples. The ability to obtain the pure SCO phase with the different annealing has been analyzed related to the film composition with in situ experiments by X-ray diffraction up to 700°C under vacuum or different gaseous atmosphere and by Raman spectroscopy up to 600°C.
Presentation: Poster at E-MRS Fall Meeting 2007, Symposium H, by Odette Chaix
See On-line Journal of E-MRS Fall Meeting 2007
Submitted: 2007-06-23 14:09 Revised: 2009-06-07 00:44