Divalent ion in a copper oxide matrix M²⁺Cu₂O₂ are intensively studied for the application field of p-type transparent conductive oxide in order to achieve transparent electronic devices. In this paper, we have studied the phase transformation during the annealing of thin films in Sr-Cu-O system analyzed with in situ studies by X-ray diffraction and Raman spectroscopy. The Sr-Cu-O were deposited on silicon wafer by means of an injection-MOCVD apparatus. FTIR and XRD analyses have shown that the films were composed of a mixture of copper oxide (CuO) and strontium carbonate. This later compound is due to the low deposition temperature. So, to achieve the SrCu₂O₂ compound, it is necessary to anneal the samples. The ability to obtain the pure SCO phase with the different annealing has been analyzed related to the film composition with in situ experiments by X-ray diffraction up to 700°C under vacuum or different gaseous atmosphere and by Raman spectroscopy up to 600°C.

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