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TEM Observation of ZnO Thin Films Grown by Atomic Layer Deposition
|Koki Saito 1, Yuya Hiratsuka 1, Atsushi Omata 1, Hisao Makino 2, Seiichi Kishimoto 2, Tetsuya Yamamoto 2, Michiya Yamaguchi 3
1. Teikyo University of Science and Technology, 2525, Uenohara, Yamanashi 409-0193, Japan
ZnO has become attractive as a new candidate for short wavelength optical devices and transparent conducive oxides because of its wide bandgap of 3.37 eV and a large exciton binding energy of 60 meV. The growth technique of atomic layer deposition (ALD) is effective to realize precise control of crystal growth and large area uniformity at low growth temperature. In our previous work, we have achieved the atomic layer growth of ZnO thin films on sapphire substrates. However, the crystal quality of those films was insufficient for the application to optical devices because of the large lattice mismatch of 18 percent between ZnO and c-plane sapphire substrate. In this work, in order to improve the crystal quality, we tried to grow ZnO thin films on ZnO substrate by ALD and crystal quality was evaluated by X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) observations.
Presentation: Poster at E-MRS Fall Meeting 2007, Symposium C, by Koki Saito
See On-line Journal of E-MRS Fall Meeting 2007
Submitted: 2007-05-10 04:49 Revised: 2009-06-07 00:44