Due to its relatively wide band gap, ZnO is attractive material for various optoelectronic applications in the short wavelength region. For such devices good Ohmic and Schottky contacts are required. In particular, the achievement of high quality Schottky diodes with large barrier heights and low leakage currents is still very challenging.

An important part of the production process of the metal-semiconductor junction is its final characterization in terms of current-voltage and capacitance-voltage dependencies. From these characteristics various parameters like ideality factor, effective barrier height of the diode, series resistance and saturation current density can be extracted. This is usually done with fitting of some theoretical formulae to experimental data. Because in many cases measured quantities depend on values of above parameters in a nonlinear way, this fitting process may be seriously disturbed by the well known difficulties. For example, if there are multiple solutions to the problem and have all been located? Do local minima (if any) differ substantially from a global one? What is the sensitivity of the solution on the uncertainties of the fitting and model parameters? Traditional methods do not answer for above questions. On the other hand interval analysis provide tools needed to resolve these problems with mathematical and computational certainty. In this work we present the results of interval computations of the ZnO based Schottky diodes. It was found that interval analysis offers interesting alternative for other fitting procedures.

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