For the past decade, an adequate diffusion barrier material has been an issue for the Cu interconnects. As a solution, atomic layer deposition (ALD) has been intensively studied for depositing transition metal-nitride materials such as TiN, TaN, W-N, W-C and W-C-N. Among the these, the resistivity of ALD-TaN is about 350~900 mΩ-㎝ and then, it performs not so good as a barrier against the Cu diffusion [1,2]. ALD-W_1.5Nfilms are deposited with WF₆-NH₃-C₂H₄-SiH₄-NH₃ gas system and it has low resistivity (480 mΩ-㎝). But, the barrier performance is failed at 500 ℃[3]. ALD-WN, WC, W-C-N films have been prepared by several researchers with metal organic precursors such as (^tBuN)₂(Me₂N)₂W and B(C₂H₅)₃ and the resisitivty is in the range of 300~2000 mΩ-㎝ [4-6]. On the other hand, we had deposited W₂N films with PECVD and ALD using WF₆ and NH₃ gases [7,8]. Then, resistivity of the ALD-W-N is as high as 3000 mΩ-㎝although the PECVD-W-N is very low (200 mΩ-㎝). Therefore, in this work we have prepared the ALD-W-C-N film using WF₆-N₂-CH₄ gas system for low resistivity and good thermal stability. As a result, we have successfully deposited the ALD W-C-N films using only simple halid gases without any metal organic precursors and pulse plasma synchronized with the exposure cycles of N₂-CH₄. This pulse plasma assisted ALD (PPALD) method offers a simple and easy deposition process since metal organic precursors are not used and low resistivity (~300 mΩ-㎝) and superior thermal stability till 800 ℃. The W-C-N films are prepared with the ALD process using WF₆-N₂-CH₄ gas system. Experimental results suggest that the H₂/N₂ plasma pretreatment and N₂ source gas instead of NH₃ gas lead to higher W and lower N concentrations. The deposition of the W-C-N film is governed by self-limiting ALD mechanism, easily controlling the film thickness.

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