E-MRS Fall Meeting 2003
on-line journal
Lectures
E-MRS Fall Meeting 2003
Symposium A
Symposium B
Symposium C
Symposium D
Symposium E
Symposium F
Symposium G
High Pressure School 2003 (5th)
Plenary session
Perspectives of nanotechnology
Pre-School of Symposium B
NanoCentre Pre-School
Posters
E-MRS Fall Meeting 2003
Symposium A
Symposium B
Symposium C
Symposium D
Symposium E
Symposium F
Symposium G
High Pressure School 2003 (5th)
Plenary session
Perspectives of nanotechnology
Pre-School of Symposium B
NanoCentre Pre-School
Timetable
E-MRS Fall Meeting 2003
Symposium A
Symposium B
Symposium C
Symposium D
Symposium E
Symposium F
Symposium G
High Pressure School 2003 (5th)
Plenary session
Perspectives of nanotechnology
Pre-School of Symposium B
NanoCentre Pre-School
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Book of Abstracts
Programme
Statistics
Participants
Countries
Institutions
Presentations per country
Symposia attendance
No.
Presenting person
Title
A-1
Yarub Al-Douri
Theoretical study on electronic, positron and structural properties of Ga-_1_-_xAl_xN
A-2
Linas Ardaravicius
Self-heating and microwave noise in AlGaN/GaN
A-3
Yevgen O. Bilevych
Schottky Barrier and Aging Effect studies in Au(Cu)/p-CdTe Contacts
A-4
Abdeslam Bouloufa
Optical properties of CuInTe_2 single crystals by photoacoustic spectroscopy
A-5
Oksana V. Chukova
Synthesis and luminescent investigation of KTiOPO_4 and NaTi_2(PO_4)_3 crystals doped with rare earth ions
A-6
Gennaro Conte
Deep UV Detection by CVD diamond position sensitive devices
A-7
Korolyuk Y. Deibuk
Thermodynamic stability of partially ordered Si_1_-_xC_x
A-8
Sevda Z. Dzhafarova
Optical characteristics and structural ordering of quasi - two - dimensional TlGaS_2 crystals doped by rare-earth ions.
A-9
Angelique Favre
UV-written channel waveguides in Er-doped Bi_2O_3-based glass
A-10
Marek Godlewski
In-depth and in-plane profiling of InGaN-based laser diodes and heterostructures
A-11
Marek Godlewski
Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
A-12
Marek Godlewski
Compensation mechanisms in magnesium doped GaN
A-13
Krystyna Golaszewska
Study of Long-Term Stability of Ohmic Contacts to GaN
A-14
Andriy Goryachko
The interaction of Pr_2O_3 with 4H-SiC(0001) surfaces
A-15
Taupin Héloise
Fabrication and characterization of SiC/Si heterojunction diode.
A-17
Vitalii Y. Ivanov
Optical and magnetic resonance investigations of ZnO crystals doped with transition metal ions
A-18
Vitalii Y. Ivanov
Optical and ODMR study of GaN-based HEMT structures
A-19
Saulius Jursenas
Impact of post-growt thermal annealing on emission of InGaN/GaN multiple quantum wells
A-20
P Kervalishivili
Nanotechnology methods for wide forbidden zone semiconductors (boron, carbon, their compounds) preparation.
A-21
Halyna Khlyap
Investigation of thermo- and photoluminescence in heterostructures PbS/ZnTe
A-22
Victor S. Kijko
Advanced transparent beryllium ceramics for ionizing radiation dosimetry
A-23
Hyoun Woo Kim
Influence of the substrate on the structural properties of sputter-deposited ZnO films
A-24
Olga L. Kobeleva
Electrical properties the five-component chalkogenides of silver
A-25
Dmytro Kolesnikov
Diffusion and diffusion induced defects in GaN
A-26
Herbert Willi Kunert
Optical characterization of GaN doping superlattices as grown, hydrogen implanted and annealed.
A-27
Ivan Kurilo
Morphology and structural perfection of vapor-grown PbI2 crystals
A-28
Dmitry Kuritsyn
Energy transfer to Er3+ ions in silicon-rich-silicon-oxide: efficiency lamitations.
A-29
Vadim B. Lebedev
Studies on sub-band gap absorption in AlGaN photoconductors and solar-blind photodetectors
A-30
Liudmila V. Makhova
Growth and Characterisation of AgIn_5S_8 and CuIn_5S_8 Thin Films
A-31
A. Matkovskii
Growth and Radiation Induced Color Centers in Oxide Laser Crystals
A-32
Saulius Miasojedovas
Stimulated emission in InGaN/GaN structures with different quantum well width
A-34
Liubomyr S. Monastyrsky
Low dimension porous silicon based heterostructures for possible optoelectronic and accessory applications
A-35
Sergiy G. Nedilko
Local complex emission centers in the wide band gap materials: theoretical predictions and experimental diagnostic possibilities
A-36
Suzuka Nishimura
GaN related LED and LD on Si substrates
A-38
Yasunao Oyama
Light scattering topography of excimer grade CaF2 crystal.
A-39
Armen R. Poghosyan
Conductivities and waveguide properties of ZnO films and multilayer structures
A-40
Piotr Potera
Color centers in YAP:Pr crystals
A-41
Tomasz R. Przesławski
Sensitive InGaAs /InP (SI) magnetic field sensors
A-42
Riccardo Rurali
Self-passivation mechanisms of N clusters in SiC
A-43
pedro l. saez
Electroluminescence of thin films prepared by photopolymerization
A-44
Viktor K. Savchuk
Reactive Pulsed Laser Deposition of Doped Zinc Oxide Films as Emitting Layers of Thin Film Electroluminescent Devices
A-45
Nicolais A. Snishonok
Electroconductivity and thermo-stimulated conductivity of cubic boron nitride
A-46
Manuel J. Soares
Optical, EPR and RBS studies in Tm implanted ZnO samples
A-47
Manuel J. Soares
Micro-Raman study of laser damage in CdTe surfaces
A-48
Krzysztof Swiatek
Photo-ESR and optical studies of Cr photoionization transition in CdZnSe:Cr crystals
A-49
Iwona Szymańska
Cu(I) complexes with perfluorinated carboxylates as potential CVD precursors
A-50
Hilmi Unlu
Temperature, pressure, strain and composition effects on band offsets in III-nitride heterostructures
A-51
Arnoldas Užupis
Effect of deposition conditions and annealing on residual stress of ITO films magnetron sputtered on silica
A-52
Oleksandr Voznyy
Effect of ordering on the optical properties of III-nitrides alloys
A-53
Shigeo Yamaguchi
Thermoelectric properties of amorphous AlInN thin films
A-54
Adam J. Zakrzewski
Modelling of quantum wells with smooth boundaries
A-55
Adam J. Zakrzewski
Kinetics of the donor-acceptor and "pseudo-donor-acceptor" pairs in nitrides
A-56
Dmytro M. Zayachuk
High-resistance low-doped GaAs and AlGaAs thin films for high power electronics
A-57
Ya. Zhydachevskii
Thermoluminescence of doped YAlO_3 crystals
A-58
Yurij V. Zorenko
The luminescent convertors based on single crystalline films
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